&lt;title&gt;Proton radiation damage in high-resistivity n-type silicon CCDs&lt;/title&gt;

Bebek, C.; Groom, D. E.; Holland, Steven E.; Karcher, A.; Kolbe, W.; Lee, Julie S.; Levi, M. E.; Palaio, N.; Turko, B.; Uslenghi, M.; Wagner, M.; Wang, Guobin

doi:10.1117/12.463422

Cited by 25 publications

(15 citation statements)

References 9 publications

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“…Previous studies indicate that divacancies are the traps primarily responsible for CTE degradation in LBNL CCDs, with carbon interstitials and carbon-oxygen traps playing a less significant role [11]. It is possible that a population of relatively benign lattice vacancies is generated during the initial cold irradiation, and remains stable at low operating temperatures.…”

Section: Effect Of Annealing On Ctementioning

confidence: 99%

“…In the p-channel CCDs, divacancy states are expected to be the dominant hole trap [7]- [9]. It has been predicted that divacancy formation in p-channel CCDs is less favorable than phosphorus-vacancy traps in n-channel CCDs [8], and prior studies have shown improved performance after radiation exposure [7], [10], [11].…”

Section: Ccd Requirementsmentioning

confidence: 99%

“…Charge transfer efficiency (CTE) was measured using the 55 Fe 5.9 keV line [11] for both parallel and serial transfers. Gain conversion from ADC count (ADU) to e − was also determined using 55 Fe images.…”

Section: Irradiation At the Lbnl 88-inch Cyclotronmentioning

confidence: 99%

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Radiation Tolerance of Fully-Depleted P-Channel CCDs Designed for the SNAP Satellite

Dawson

Bebek

Emes

et al. 2008

IEEE Trans. Nucl. Sci.

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Abstract-Thick, fully depleted p-channel charge-coupled devices (CCDs) have been developed at the Lawrence Berkeley National Laboratory (LBNL). These CCDs have several advantages over conventional thin, n-channel CCDs, including enhanced quantum efficiency and reduced fringing at nearinfrared wavelengths and improved radiation tolerance. Here we report results from the irradiation of CCDs with 12.5 and 55 MeV protons at the LBNL 88-Inch Cyclotron and with 0.1 -1 MeV electrons at the LBNL 60 Co source. These studies indicate that the LBNL CCDs perform well after irradiation, even in the parameters in which significant degradation is observed in other CCDs: charge transfer efficiency, dark current, and isolated hot pixels. Modeling the radiation exposure over a sixyear mission lifetime with no annealing, we expect an increase in dark current of 20 e − /pixel/hr, and a degradation of charge transfer efficiency in the parallel direction of 3 × 10 −6 and 1 × 10 −6 in the serial direction. The dark current is observed to improve with an annealing cycle, while the parallel CTE is relatively unaffected and the serial CTE is somewhat degraded. As expected, the radiation tolerance of the p-channel LBNL CCDs is significantly improved over the conventional n-channel CCDs that are currently employed in space-based telescopes such as the Hubble Space Telescope.

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Section: Effect Of Annealing On Ctementioning

confidence: 99%

Section: Ccd Requirementsmentioning

confidence: 99%

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Radiation Tolerance of Fully-Depleted P-Channel CCDs Designed for the SNAP Satellite

Dawson

Bebek

Emes

et al. 2008

IEEE Trans. Nucl. Sci.

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“…In early studies, charge has been shifted over several pixels, creating bright pixels neighbouring several darker pixels from which charge was lost [21]. Using this form of the technique, one can measure a histogram of the bright and dark pixels at varying temperatures.…”

Section: Trap Pumpingmentioning

confidence: 99%

Determination of In Situ Trap Properties in CCDs Using a “Single-Trap Pumping” Technique

Hall

Murray

Holland

et al. 2014

IEEE Trans. Nucl. Sci.

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Abstract-The science goals of space missions from the Hubble Space Telescope through to Gaia and Euclid require ultra-precise positional, photometric and shape measurement information. However, in the radiation environment of the space telescopes, damage to the focal plane detectors through high energy protons leads to the creation of traps, a loss of charge transfer efficiency and a consequent deterioration in measurement accuracy. An understanding of the traps produced and their properties in the CCD during operation is essential to allow optimisation of the devices and suitable modelling to correct the effect of the damage through the post-processing of images. The technique of "pumping single traps" has allowed the study of individual traps in high detail that cannot be achieved with other techniques, such as Deep Level Transient Spectroscopy, whilst also locating each trap to the sub-pixel level in the device. Outlining the principles used, we have demonstrated the technique for the Acentre, the most influential trap in serial read-out, giving results consistent with the more general theoretical values, but here showing new results indicating the spread in the emission times achieved and the variation in capture probability of individual traps with increasing signal levels. This technique can now be applied to other time and temperature regimes in the CCD to characterise individual traps in situ under standard operating conditions such that dramatic improvements can be made to optimisation processes and modelling techniques.

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“…The use of high purity, n-type silicon has proven to be very radiation tolerant in the accelerator environment of high energy physics experiments. Early measurements of the CCD charge transfer efficiency degradation as a function of proton dose indicates that these CCDs will be more radiation tolerant than previously flown devices [11,12]. Further characteristics of this CCD technology are presented elsewhere at this conference [13].…”

Section: Visible Detectorsmentioning

confidence: 99%

SNAP satellite focal plane development

Bebek

Akerlof

Aldering

et al. 2003

UV/EUV and Visible Space Instrumentation for Astronomy II

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The proposed SuperNova/Acceleration Probe (SNAP) mission will have a two-meter class telescope delivering diffraction-limited images to an instrumented 0.7 square degree field in the visible and near-infrared wavelength regime. The requirements for the instrument suite and the present configuration of the focal plane concept are presented. A two year R&D phase, largely supported by the Department of Energy, is just beginning. We describe the development activities that are taking place to advance our preparedness for mission proposal in the areas of detectors and electronics.

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<title>Proton radiation damage in high-resistivity n-type silicon CCDs</title>

Cited by 25 publications

References 9 publications

Radiation Tolerance of Fully-Depleted P-Channel CCDs Designed for the SNAP Satellite

Radiation Tolerance of Fully-Depleted P-Channel CCDs Designed for the SNAP Satellite

Determination of In Situ Trap Properties in CCDs Using a “Single-Trap Pumping” Technique

SNAP satellite focal plane development

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