&lt;title&gt;SCALPEL system&lt;/title&gt;

Berger, S. D.; Biddick, C.; Blakey, Myrtle I.; Bolan, K.; Bowler, Stephen W.; Brady, Kevin; Camarda, Ron M.; Connelly, Wayne F.; Farrow, R. C.; Felker, Joseph A.; Fetter, Linus A.; Harriott, L. R.; Huggins, H. A.; Kraus, J.; Liddle, J. Alexander; Mkrtchyan, Masis M.; Novembre, Anthony E.; Peabody, Milton L.; Russell, Thomas M.; Simpson, W. M.; Tarascon-Auriol, Regine G.; Wade, Harry H.; Waskiewicz, W. K.; Watson, Patrick

doi:10.1117/12.195843

Cited by 11 publications

(1 citation statement)

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“…For other EBL systems, such as the variable shaped EB (VSB) systems, and EB projection systems [electron projection lithography (EPL) system and scattering with angular limitation projection electron beam lithography (SCALPEL) system], [6][7][8][9][10][11][12][13][14][15][16][17][18][19][20][21] the Coulomb blurs have always been obstructive. To achieve high writing/exposure throughput, a large I b is needed.…”

Section: Introductionmentioning

confidence: 99%

130 kV High-Resolution Electron Beam Lithography System for Sub-10-nm Nanofabrication

Okino¹,

Kuba²,

Shibata³

et al. 2013

Jpn. J. Appl. Phys.

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An electron beam lithography (EBL) system, CABL-UH, with a 130 kV high acceleration voltage has been developed that succeeded in minimizing beam size by minimizing Coulomb blur. This system has a short single-stage electron beam (EB) gun with an alignment function of two extractor centers to minimize Coulomb blur. This gun has also succeeded in thoroughly avoiding microdischarges. By adopting this EB gun and many other techniques, high resolution and long-term high stability have been achieved and an extremely fine pattern (4 nm line) has been delineated.

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Section: Introductionmentioning

confidence: 99%

130 kV High-Resolution Electron Beam Lithography System for Sub-10-nm Nanofabrication

Okino¹,

Kuba²,

Shibata³

et al. 2013

Jpn. J. Appl. Phys.

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Charged‐Particle Lithography

Berger¹,

Kretz²,

Beyer³

et al. 2010

Nanotechnology

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Although, today, the main method for pattering almost all integrated circuits (ICs) is photolithography, charged‐particle lithography – where charged particles (electrons, ions) are used for patterning – already has a wide range of applications. Electron beam lithography (EBL) is currently utilized for fabricating the photomasks essential for photolithography, as a time‐ and cost‐effective technique for early device and technology development, and also for fabricating the imprint templates necessary for the emerging technique of nanoimprint lithography (NIL). All of these applications are enabled by single‐beam writing techniques, which are undergoing continuous improvement. However, as photomask costs have increased, and continue to increase, it has become almost untenable to produce high‐end ICs in low volume. Hence, today the use of field‐programmable gate arrays (FPGAs) has surpassed that of the faster and more highly integrated application‐specific integrated circuits (ASICs). Consequently, promising new multiple‐beam writing techniques are currently under development, known as maskless lithography (ML2), for the volume production of ICs. Ion beam lithography (IBL) represents an alternative approach for the fabrication of imprint templates for NIL, with the advantage of not requiring resist processing. Currently, both EBL and IBL are the only viable methods for fabricating nano‐electromechanical systems and nanotechnology devices, and therefore are essential tools for the emerging nanotechnology.

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Limits of Conventional Lithography

Tennant¹

1999

Nanotechnology

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<title>SCALPEL system</title>

Cited by 11 publications

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130 kV High-Resolution Electron Beam Lithography System for Sub-10-nm Nanofabrication

130 kV High-Resolution Electron Beam Lithography System for Sub-10-nm Nanofabrication

Charged‐Particle Lithography

Limits of Conventional Lithography

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