1991
DOI: 10.1117/12.43434
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<title>Signal, noise, and readout considerations in the development of amorphous silicon photodiode arrays for radiotherapy and diagnostic x-ray imaging</title>

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Cited by 19 publications
(5 citation statements)
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“…Active matrix flat panel imager (AMFPI) technology has undergone extensive research and development since its conception in the late 1980s (Street et al 1990, Antonuk et al 1991. 1 Currently at the Department of Radiation Oncology, Virginia Commonwealth University,VA, USA.…”
Section: Introductionmentioning
confidence: 99%
See 1 more Smart Citation
“…Active matrix flat panel imager (AMFPI) technology has undergone extensive research and development since its conception in the late 1980s (Street et al 1990, Antonuk et al 1991. 1 Currently at the Department of Radiation Oncology, Virginia Commonwealth University,VA, USA.…”
Section: Introductionmentioning
confidence: 99%
“…(Street et al 1990, Antonuk et al 1991 AMFPIs employ a two-dimensional matrix of a-Si:H thin-film-transistors (TFTs), connected to gate and data address lines. These circuits are fabricated on large glass substrates to form pixelated arrays and may be divided into two categories -direct detection and indirect detection.…”
Section: Introductionmentioning
confidence: 99%
“…5). 48 The following year (1992) the first paper on amorphous selenium (a-Se) based, or direct conversion FPD was presented. 49 This decade saw a rapid growth of the number of SPIE presentations on both direct and indirect FPD, and an increasing number of contributions from the industry while FPD was being commercialized.…”
Section: Flat-panel Detectorsmentioning
confidence: 99%
“…(V 2 /Hz) , [1] where k represents the noise power at 1 Hz (measured to be ~1.6×10 -9 V 2 /Hz), and f is frequency with a coefficient, α, set to 1.…”
Section: A Amplifier Input Noisementioning
confidence: 99%