&lt;title&gt;SPEEDIE: a profile simulator for etching and deposition&lt;/title&gt;

McVittie, J.P.; Rey, Juan C.; Bariya, Anand J.; IslamRaja, M. M.; Cheng, Liangliang; S, Ravi; Saraswat, Krishna C.

doi:10.1117/12.48908

Cited by 28 publications

(10 citation statements)

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“…For s(e), we have used the following expression 2x---x(cose) (2) 7t mj+ma) 0 Where U0 is the surface binding energy, m1 the mass of ion, ma the mass of target atom, a is a factor depending on the mass ratio ma I m1, E the energy of the incident particle and f a factor depending on the mass ratio: (f = 5/3 for 1O <ma / rn <3 and f=l for ma/mi =10).…”

Section: Resultsmentioning

confidence: 99%

<title>Analytic models and parametric investigations of IBE and RIE mechanisms for GaAs compounds</title>

et al. 1994

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Keywords: reactive ion etching, sputtering yield, etch rate, plasma sheath, analytic model, activation energy.This work introduces a comprehensive analytic model of the sputtering mechanism present in Ion Beam Etching and Reactive Ion Etching processes. Our final objective is to correlate the etch rate to the plasma reactor parameters. Experimental verifications for GaAs etching show a good agreement for Ion Beam Etching. In the case of Reactive Ion Etching, the non perfect agreement is explained by the influence of effects such as flow rate and temperature not taken into account in the theoretical approach. We also present parametric investigations of GaAs etched in SiC14 plasma.

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Section: Resultsmentioning

confidence: 99%

<title>Analytic models and parametric investigations of IBE and RIE mechanisms for GaAs compounds</title>

et al. 1994

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“…Theirs is by no means the only work in this area. Application of a variety of techniques to simulation of thin film patterning may be found in [15], [48], [21], [23], [28], [27], [33], [34], [40], and [45]. Further comparison of the various methods is beyond the scope of this paper.…”

Section: Introductionmentioning

confidence: 99%

“…A sampling of models may be found in [14], [15], [48], [22], [33], [35], [49], [52], [53]. These models are well suited to real-time or iterative applications, but their usefulness depends on the ability of the process engineer to choose the parameter values correctly.…”

Section: Introductionmentioning

confidence: 99%

Shape-based optimal estimation and design of curve evolution processes with application to plasma etching

Berg

Zhou

2001

IEEE Trans. Automat. Contr.

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This paper considers the problem of determining a finite number of discrete parameters appearing in a nonlinear partial differential equation describing a curve evolution process. The method is applied to the plasma etching of thin films for semiconductor manufacturing. Results are obtained within the mathematical framework of level set methods. Here, the evolution of the curve under study is captured through the evolution of a level set function. The underlying physics of the process are completely contained in a scalar function called the speed function. The degree of difficulty of treating the evolution equation depends on the functional dependencies of the speed function. This paper presents optimal estimation and design techniques based on analytical gradient computations for a class of position and orientation dependent speed functions. The technique is demonstrated on a plasma etching model taken from the literature. Only simulation results are presented here, but the model under study has been shown to reproduce experimental data with reasonable accuracy. In the estimation problem, parameters in the model are fit to best match the feature shape measured in experiments. In the optimal design problem, parameter values are selected to most closely attain a desired feature shape.

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“…Phenomenological models are necessary because of the complexity of the surface chemistry and the plasma-surface interactions. Typically these models lump together numerous unknown rate constants into relatively few parameters [7,11,17]. Reliable use of these models for simulation or control then depends on the ability of the user to chose the values of these parameters correctly.…”

Section: Introductionmentioning

confidence: 99%

On Parameter Estimation Using Level Sets

Berg¹,

Holmström²

1999

SIAM J. Control Optim.

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Consider the problem of selecting the member of a parametrized family of curves that best matches a given curve. This is a key step in determining proper values for adjustable parameters in low-order plasma etching and deposition models. Level set methods oer several attractive features for treating such problems. This paper presents a parameter estimation scheme that exploits the level set formulation. The method is completely geometric; there is no need to introduce an arbitrary coordinate system for the curves.

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<title>SPEEDIE: a profile simulator for etching and deposition</title>

Cited by 28 publications

References 0 publications

<title>Analytic models and parametric investigations of IBE and RIE mechanisms for GaAs compounds</title>

<title>Analytic models and parametric investigations of IBE and RIE mechanisms for GaAs compounds</title>

Shape-based optimal estimation and design of curve evolution processes with application to plasma etching

On Parameter Estimation Using Level Sets

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