&lt;title&gt;Synthesis of silicon nanoparticles and impurity doping by laser ablation&lt;/title&gt;

Murakami, Kouichi; Makimura, Tetsuya; Mizuta, Taiji; Li, Changquing; Takeuchi, Daishi

doi:10.1117/12.432512

Cited by 1 publication

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“…Accordingly, P-or B-doping of Si NPs is also a primary process that can broaden the applications of these materials for various devices. A number of synthesis processes for P-or B-incorporatedSi NPs have been reported.Murakamiinvestigated doping effects of P in Si NPssynthesized via pulsed-laser ablation [11].Song et alused plasmaenhanced chemical vapor deposition(CVD) to synthesize Si NPs with P-or B, and reported the increasing conductivity of Si NPs by doping [12]. Fujii et al doped P or B into Si NPs embedded in SiO 2 via co-sputtering of Si and phosphosilicate glass [13].…”

Section: Introductionmentioning

confidence: 99%

Phosphorous Incorporated-Silicon Nanoparticles Synthesized Using Double Tube Reactor and Inductive Coupled Plasma

Koo

Jung

Jang

2015

AMR

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Phosphorous (P) incorporated silicon nanoparticles (Si NPs) were synthesized by using inductive coupled plasma (ICP) and a specially designed double tube reactor.Their microstructures were investigated by injecting various amounts of PH3 gas during the synthesis. Injection of PH3 gas during the synthesis resulted in a change from crystalline to amorphous phase, a reduction of particle size as well as process yield. These results were attributed to a lower plasma density when higher amount of PH3 was injected.From EDS, SIMS and XPS analysis, it was revealed that P was successively incorporated in Si NPs.However, secondary phases such as P4 (red P) and P2O5were formed as amorphous ones in nanoscale when a relatively large amount of PH3 was injected.

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Section: Introductionmentioning

confidence: 99%