<title>Thinned backside-illuminated cooled CCDs for UV and VUV applications</title>

Abstract

It is well known that thinned backside illuminated CCD image sensors are very efficient for electron beam imaging. We have adapted our electron-bombarded (EB) CCD for application in UV and VUV spectral regions. This adaptation includes the creation of shallow accumulation layer near the device backside surface either by ion implantation and annealing or by a certain chemical treatment of the surface. Preliminary experimental results confirm the applicapability of the developed procedure in achieving a reasonable quantum efficiency. Some problems associated with the UV and VUV imagers design and fabrication are discussed.