2024
DOI: 10.1039/d3tc04053d
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LTP–LTD transformation of unipolar pulse voltage-driven zinc oxide memristors via TiO2 thin layer incorporation

Yucheng Wang,
Jiawei Zheng,
Yueyang Shang
et al.

Abstract: ZnO-based memristors are considered to be promising candidates in neuromorphic computing because of their nonvolatile resistive switching characteristics.

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