Luminescence and electron paramagnetic resonance studies of white-light emitting SrS: Pr, F thin film electroluminescent devices

Abstract

The fluorescence emission and excitation spectra of white-light emitting SrS: Pr, F thin film electroluminescent devices have been investigated. It was determined from the results obtained that the dominant electroluminescence mechanism was that the ionization of Pr3+ centers occurs first, then subsequently recombination with electrons occurs, and finally Pr3+ center transitions give rise to luminescence. The emission mechanism of SrS: Pr, F seems to be the same as that of a SrS: Pr, K electroluminescent device, except for the appearance of strong peaks around 610–670 nm. The impurity excitation peak in the lower excitation energy, longer-wavelength region in the FL spectrum may be an important factor for the selection of an effective white-light emitting EL material. The electron paramagnetic resonance experiment of SrS: Pr, F was performed on powder and thin film specimens. The hyperfine structure of an isolated Mn2+ ion was observed in this SrS: Pr, F thin film. This Mn center which was substituted for Sr, seems to contribute to the strong red emission in the white EL spectrum.

The SrS doped with Cl and K: a promising ambipolar semiconductor for transparent electronics application

“…It forms a closed-shell ionic system and crystallizes in the rock-salt structure with a space group of Fm-3m at ambient conditions [47]. Recently, SrS has attracted much attention, and is widely studied in terms of the experiments [48][49][50][51] and theory [52,53]. Till now, few works focus on its transparent conducting properties, especially for ambipolar properties.…”

TL and PL studies on defect-assisted green luminescence from doped strontium sulfide phosphor

“…The survey of literature reveals that the lower intensity excitation band at 355 nm for SrS:Pr, K thin film electroluminescent devices have been reported in Ref. [3] as due to Pr 3+ excitation. Also, excitation bands in the range 250-350 nm have been assigned to the direct excitation from 4f 2 to 4f5d excited states of Pr 3+ in Ref.…”

“…SrS phosphor now appears to be the most common commercial alternating current thin-film electroluminescent (ACTFEL) phosphor host other than ZnS:Mn. SrS:Ce, K, Eu and SrS:Pr, K have proven to be promising materials for the active layer of EL devices [3]. Although AES are one of the oldest luminescent materials, there is a comparative lack of information about the defect properties in these materials, especially those doped with Pr 3+ .…”

Theoretical insights into the defect performance of the wide bandgap semiconductor BaS

“…Binary alkaline-earth chalcogenides, consisting of IIA–VIA group elements, have attracted increasing interest due to their potential applications in luminescent devices, microelectronics, magnetics, and thermoelectricity. 47–51 Most of these compounds are wide bandgap semiconductors and possess excellent optical transparency in the visible spectrum. 30 Recently, some researchers have proposed that parts of them are promising candidates for optoelectronic applications.…”