Luminescence behavior from amorphous silicon-carbide film-based optical microcavities

Chen, Deyuan; Xu, Jun; Qian, Bo; Chen, San; Mei, Jiaxin; Xu, Ling; Chen, Kunji

doi:10.1016/j.matchemphys.2008.04.008

Cited by 12 publications

(3 citation statements)

References 15 publications

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“…Early work [94] reports room temperature PL spectra of a-Si 1-x C x films at 2.61 eV (475 nm). Subsequent work on a-SiC shows examples of tailoring in experimentations to control the PL peak position (300 -700 nm, as also 1540 nm) and width [116][117][118]. A recent technology uses low temperature and pressure microwave plasma reactors for successfully producing amorphous nanoparticles (4-6 nm) of SiC [119].…”

Section: Additional Examplesmentioning

confidence: 99%

Size Effects in Amorphous Nanosolids

Ganguli

2010

KEM

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Compared to information on nanocrystals, that on amorphous nanosolids is on the whole much less organized. On the other hand, growth of structural data in recent years on the latter, that deal with the range of atomic order (short range order and beyond), coordinations of core and surface atoms and similar aspects in amorphous nanoparticles through computer simulation and other techniques, has been very impressive. Similar generation of information is also true for physical phenomena like crystallization and melting. Finally, interesting properties revealed through experimentations point toward important applications. The present article makes a brief survey of these areas and attempts at reaching certain conclusions mostly specific for amorphous nanostructures with respect to the crystalline counterparts. The article analyzes the structural data to try and explain different properties of amorphous nanosolids and also their position in the applications scenario.

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Section: Additional Examplesmentioning

confidence: 99%

Size Effects in Amorphous Nanosolids

Ganguli

2010

KEM

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“…The electrochemical properties of SiC nanoparticles suspension at Cu electrode was reported [23]. The stability and optical properties of SiC quantum dots and luminescence behavior of amorphous silicon-carbide film have been investigated [24,25]. To our best knowledge no reports exist in literature about the application of silicon carbide nanoparticles for biosensor fabrication.…”

Section: Introductionmentioning

confidence: 99%

Sensitive Superoxide Biosensor Based on Silicon Carbide Nanoparticles

et al. 2010

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Direct electron transfer of immobilized superoxide dismutase (Cu, Zn-SOD) onto silicon carbide (SiC) nanoparticles displays a pair of well defined and nearly reversible redox peaks with formal potential (E8') of À 0.03 V in pH 7.4. The heterogeneous electron transfer rate constant (k s ) and surface coverage (G) of immobilized SOD are 11.0 AE 0.4 s À1 and 1.42 Â 10 À11 mol cm À2. Biosensor shows fast amperometric response (3s) with sensitivity and detection limit of 1.416 nA mM À1 , 1.66 mM, and 1.375 nA mM À1 , 2.1 mM for cathodically or anodically detection of superoxide, respectively. This biosensor also exhibits good stability, reproducibility and long life-time.

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“…The importance of deposition conditions and post deposition annealing treatment on the PL property of a-SiO x :H have been also studied [3,9]. The enhancement of PL from a-Si:H and its alloys by means of microcavity effect has been presented within many works [10][11][12][13], as well.…”

Section: Introductionmentioning

confidence: 99%

Observation and enhancement of visible photoluminescence of PECVD a‐SiO_x:H (x < 2) thin films by microcavity effect

Bacıoğlu

Kodolbaş

Öktü

2010

Phys. Status Solidi (c)

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Abstracta‐SiOx:H (x < 2) thin film samples prepared in a PECVD system by using SiH4+CO2 gas mixture show strong room temperature visible photoluminescence (PL) at a photon energy of 2.1 eV. The PL spectrum of a single layer sample was observed to reshape due to the multiple reflection between two interfaces of the film. The orders of the resonance modes in the PL spectrum range of 1.5 eV‐2.5 eV, were calculated to be within a range of m=8 to m=13. The peak energy of the most intense mode (m=11) was observed at 2.1 eV and the half width and the quality factor of the microcavity were calculated as Δν=20 THz and Q=20, respectively. Two multi‐layered distributed Bragg reflectors (10 and 25 layer pairs) were fabricated with two different refractive indices (n1=3.2 and n2=2.4) of the layers with λ/4 (λ0=580nm) optical thickness. The PL intensity was detected increasing in intensity around the photon energy of 2 eV and the other modes were suppressed. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Luminescence behavior from amorphous silicon-carbide film-based optical microcavities

Cited by 12 publications

References 15 publications

Size Effects in Amorphous Nanosolids

Size Effects in Amorphous Nanosolids

Sensitive Superoxide Biosensor Based on Silicon Carbide Nanoparticles

Observation and enhancement of visible photoluminescence of PECVD a‐SiO_x:H (x < 2) thin films by microcavity effect

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Luminescence behavior from amorphous silicon-carbide film-based optical microcavities

Cited by 12 publications

References 15 publications

Size Effects in Amorphous Nanosolids

Size Effects in Amorphous Nanosolids

Sensitive Superoxide Biosensor Based on Silicon Carbide Nanoparticles

Observation and enhancement of visible photoluminescence of PECVD a‐SiOx:H (x < 2) thin films by microcavity effect

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Product

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Observation and enhancement of visible photoluminescence of PECVD a‐SiO_x:H (x < 2) thin films by microcavity effect