Luminescence characteristics of quantum wires grown by organometallic chemical vapor deposition on nonplanar substrates

Kapon, E.; Kash, K.; Clausen, E. M.; Hwang, D. M.; Colas, E.

doi:10.1063/1.106641

Cited by 73 publications

(23 citation statements)

References 12 publications

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“…A variety of different fabrication techniques such as e-beam lithography, 1 growth on misoriented substrates ͑Ser-pentine superlattices 2 ͒, or prepatterned substrates ͑V-groove quantum wires 3 ͒ have been demonstrated. Another possibility is the fabrication of a T-shaped intersection of two quantum wells ͑QWs͒, as was proposed by Chang, Chang, and Esaki.…”

Section: Introductionmentioning

confidence: 99%

Transient four-wave mixing in T-shaped GaAs quantum wires

1999

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The binding energy of excitons and biexcitons and the exciton dephasing in T-shaped GaAs quantum wires is investigated by transient four-wave mixing. The T-shaped structure is fabricated by cleaved-edge overgrowth, and its geometry is engineered to optimize the one-dimensional confinement. In this wire of 6.6 ϫ24 nm 2 size, we find a one-dimensional confinement of more than 20 meV, an inhomogeneous broadening of 3.4 meV, an exciton binding energy of 12 meV, and a biexciton binding energy of 2.0 meV. A dispersion of the homogeneous linewidth within the inhomogeneous broadening due to phonon-assisted relaxation is observed. The exciton acoustic-phonon-scattering coefficient of 6.1Ϯ0.5 eV/K is larger than in comparable quantum-well structures. ͓S0163-1829͑99͒04147-8͔

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Section: Introductionmentioning

confidence: 99%

Transient four-wave mixing in T-shaped GaAs quantum wires

1999

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“…The similar transitions were reported in the V-grooved wire structures. [11][12][13] Figure 2͑b͒ illustrates clearly that the emissions 1, 2 and 3 are from the patterned substrate regions. The spectra in Fig.…”

Section: Resultsmentioning

confidence: 99%

Optical properties of arsenic ions implanted GaAs/AlGaAs V-grooved quantum wires

Zhao

Willander

Lü

et al. 2000

Journal of Applied Physics

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Observation of wire width fluctuations in the optical spectra of GaAs-AlGaAs V-groove quantum wires Appl. Phys. Lett. 73, 3420 (1998) Asymmetric double GaAs/AlGaAs V-grooved quantum wires, grown by low pressure metalorganic chemical vapor deposition, are studied using photoluminescence ͑PL͒ spectroscopy. The structure was selectively treated by ion implantation at different arsenic ͑As͒ doses after growth. The ion implantation strongly reduces the efficiency of the emissions from the implanted well regions or even quenches the PL emissions from certain well regions due to irradiation damage. Wire emission is clearly resolved in the samples after treatment by low dose implantation. The temperature dependence of the wire emission intensity shows an enhancement at a temperature of around 45 K. The wire emission peak with a shoulder at its high energy side at low temperatures develops into double peaks in a temperature region between 20 and 140 K, and the high energy transition component dominates the PL spectra at temperatures above 140 K. The deduced energy separation between two peaks is about 10 meV. With further increasing temperatures the wire emission related to the light hole state can be observed at temperatures above 150 K. Deduced splitting between the heavy and light states is about 35 meV in our structures.

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“…By using this simple procedure, continuous thin nanowires with lengths up to hundreds of micrometers may be prepared on the surface of solid substrates, which may in turn be released sequentially into free-standing forms or transferred onto another support [19]. Infact,this isone of the best advantages of thetemplate technique, as the template is only used to limit physically the geometric features of 1D nanostructures.…”

Section: Preparation Of Nanowires and Nanotubes By Template-based Synmentioning

confidence: 99%