Luminescence due to lattice-mismatch defects in ZnTe layers grown by metalorganic vapor phase epitaxy

Naumov, A.; Wolf, K.; Reisinger, T.; Stanzl, H.; Gebhardt, W.

doi:10.1063/1.353071

Cited by 50 publications

(18 citation statements)

References 18 publications

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“…50 meV below the free A-exciton transition energy. These findings remind very much on the Y-lines observed first by Dean et al in ZnSe [40], later observations were made by Naumov et al [34] and Fujii et al [41] in ZnTe. Note that the 3.41 eV emission in GaN also belongs to this class of recombination type [42].…”

Section: ˚C Annsupporting

confidence: 75%

“…It was, therefore, our interest to gain further insight into the nature of those recombinations using temperature dependent photoluminescence as well as spatially resolved cathodoluminescence. Our conclusion is that the lines sharp at around 3.333 eV is of excitonic nature and show most of the established features of the Y-line (excitons bound to structural defects) recombination commonly be seen in ZnSe and ZnTe [34,35]. Other lines between 3.31 and 3.33 eV belong to two-electron satellite transitions of the neutral donor bound exciton recombinations [33,36].…”

Section: Introductionmentioning

confidence: 82%

“…different TES). In the heteroepitaxial films we can of course expect that latticemismatch defects may influence the radiative recombination as was the case for the layers grown by MOCVD ZnSe on GaAs or Ge and ZnTe on GaAs and GaSb ( [34] and Refs. therein).…”

Section: ˚C Annmentioning

confidence: 97%

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Bound exciton and donor–acceptor pair recombinations in ZnO

Meyer

Alves

Hofmann

et al. 2004

Physica Status Solidi (b)

1,609

153

1,169

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The optical properties of excitonic recombinations in bulk, n-type ZnO are investigated by photoluminescence (PL) and spatially resolved cathodoluminescence (CL) measurements. At liquid helium temperature in undoped crystals the neutral donor bound excitons dominate in the PL spectrum. Two electron satellite transitions (TES) of the donor bound excitons allow to determine the donor binding energies ranging from 46 to 73 meV. These results are in line with the temperature dependent Hall effect measurements. In the as-grown crystals a shallow donor with an activation energy of 30 meV controls the conductivity. Annealing annihilates this shallow donor which has a bound exciton recombination at 3.3628 eV. Correlated by magnetic resonance experiments we attribute this particular donor to hydrogen. The Al, Ga and In donor bound exciton recombinations are identified based on doping and diffusion experiments and using secondary ion mass spectroscopy. We give a special focus on the recombination around 3.333 eV, i.e. about 50 meV below the free exciton transition. From temperature dependent measurements one obtains a small thermal activation energy for the quenching of the luminescence of 10 ± 2 meV despite the large localization energy of 50 meV. Spatially resolved CL measurements show that the 3.333 eV lines are particularly strong at crystal irregularities and occur only at certain spots hence are not homogeneously distributed within the crystal contrary to the bound exciton recombinations. We attribute them to excitons bound to structural defects (Y-line defect) very common in II-VI semiconductors. For the bound exciton lines which seem to be correlated with Li and Na doping we offer a different interpretation. Li and Na do not introduce any shallow acceptor level in ZnO which otherwise should show up in donor -acceptor pair recombinations. Nitrogen creates a shallow acceptor level in ZnO. Donor -acceptor pair recombination with the 165 meV deep N-acceptor is found in nitrogen doped and implanted ZnO samples, respectively. In the best undoped samples excited rotational states of the donor bound excitons can be seen in low temperature PL measurements. At higher temperatures we also see the appearance of the excitons bound to the B-valence band, which are approximately 4.7 meV higher in energy.

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Section: ˚C Annsupporting

confidence: 75%

Section: Introductionmentioning

confidence: 82%

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Bound exciton and donor–acceptor pair recombinations in ZnO

Meyer

Alves

Hofmann

et al. 2004

Physica Status Solidi (b)

1,609

153

1,169

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“…Similar observations of excitonic recombinations at structural defects have also been reported in many other II-VI and III-V semiconductors such as ZnTe, CdTe, ZnS, CdS, GaN, and GaP. 41,46,[105][106][107] Naumov et al 105 discovered that the intensity of Y line emissions in ZnTe epilayers is a function of the lattice mismatch between layer and substrate and concluded that the observed luminescence is related to recombinations of excitons bound to extended structural defects which should be represented by misfit dislocations. Similar transition lines were also found in CdTe which were attributed to excitons bound to structural defects such as twins, dislocations, or stacking faults.…”

Section: K Defect Bound Excitons In Other Compound Semiconductorssupporting

confidence: 57%

Bound excitons in ZnO: Structural defect complexes versus shallow impurity centers

et al. 2011

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ZnO single crystals, epilayers, and nanostructures often exhibit a variety of narrow emission lines in the spectral range between 3.33 and 3.35 eV which are commonly attributed to deeply bound excitons (Y lines). In this work, we present a comprehensive study of the properties of the deeply bound excitons with particular focus on the Y 0 transition at 3.333 eV. The electronic and optical properties of these centers are compared to those of the shallow impurity related exciton binding centers (I lines). In contrast to the shallow donors in ZnO, the deeply bound exciton complexes exhibit a large discrepancy between the thermal activation energy and localization energy of the excitons and cannot be described by an effective mass approach. The different properties between the shallow and deeply bound excitons are also reflected by an exceptionally small coupling of the deep centers to the lattice phonons and a small splitting between their two electron satellite transitions. Based on a multitude of different experimental results including magnetophotoluminescence, magnetoabsorption, excitation spectroscopy (PLE), time resolved photoluminescence (TRPL), and uniaxial pressure measurements, a qualitative defect model is developed which explains all Y lines as radiative recombinations of excitons bound to extended structural defect complexes. These defect complexes introduce additional donor states in ZnO. Furthermore, the spatially localized character of the defect centers is visualized in contrast to the homogeneous distribution of shallow impurity centers by monochromatic cathodoluminescence imaging. A possible relation between the defect bound excitons and the green luminescence band in ZnO is discussed. The optical properties of the defect transitions are compared to similar luminescence lines related to defect and dislocation bound excitons in other II-VI and III-V semiconductors.

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“…The spectrum obtained from the sample grown on the R-plane sapphire exhibited the donoracceptor (D-A) pair emissions whose 0 th order peak was located at about 2.3 eV and two kinds of Y emission whose peaks were located at about 2.16 eV and 2.19 eV. It was reported that these Y emissions were related the recombination of excitons that were localized at extended structural defects [19]. The D-A peak was not observed from the layer grown on the S-plane substrate.…”

Section: Resultsmentioning

confidence: 98%

ZnTe layers on R ‐ and S ‐plane sapphire substrates

Nakasu

Hattori

Kizu

et al. 2016

Phys. Status Solidi C

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ZnTe epilayers were grown on R ‐plane ($ 10 \bar 1 4 $) and S ‐plane ($ 10 \bar 1 1 $) sapphire substrates by molecular beam epitaxy, and the crystal orientation and the optical property were studied. The crystal orientation of ZnTe layers on sapphire substrates was studied using X‐ray diffraction pole figure measurements. It was confirmed that (111)‐oriented domains were formed on the R ‐plane as well as on the S ‐plane substrate. Layers grown on R ‐plane exhibited higher film quality. From the low‐temperature photoluminescence, emissions caused by ZnTe exciton were observed. (© 2016 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Luminescence due to lattice-mismatch defects in ZnTe layers grown by metalorganic vapor phase epitaxy

Cited by 50 publications

References 18 publications

Bound exciton and donor–acceptor pair recombinations in ZnO

Bound exciton and donor–acceptor pair recombinations in ZnO

Bound excitons in ZnO: Structural defect complexes versus shallow impurity centers

ZnTe layers on R ‐ and S ‐plane sapphire substrates

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