2016
DOI: 10.1002/pssa.201600481
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Luminescence dynamics in AlGaN with AlN content of 20%

Abstract: Optical properties and carrier dynamics of an AlGaN layer with an AlN content of 20% have been studied using time‐resolved photoluminescence (TR‐PL). Despite the high density of defects due to the relatively high AlN content, an intense PL emission from the sample has been detected. Low‐temperature PL spectra exhibit several features, accompanied by a strong emission‐wavelength dependence of the PL decay time. A significant red‐shift of more than 200 meV from the band edge is recorded for the PL emission from … Show more

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