Luminescence effects of ion-beam bombardment of CdTe surfaces

Olvera, J.; Martínez, O.; Plaza, J.L.; Diéguez, E.

doi:10.1016/j.jlumin.2009.04.004

Cited by 7 publications

(1 citation statement)

References 20 publications

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“…Our study material is CdTe, semiconductor compound of the II-VI family, which is extensively studied because of its properties in the field of detection X and γ ray 3,4 its use in optoelectronic and other applications such as infrared (IR) detection, medical imagery 5,6 and the manufacture of photovoltaic devices. 7,8 The direct gap of this material allows the generation of a significant cathodoluminescence signal CL, which facilitates its theoretical study in terms of some important parameters influencing several industrial applications.…”

Section: Introductionmentioning

confidence: 99%

Theoretical calculation of cathodoluminescence: Influence of surface and bulk parameters on the depletion region of p-type CdTe

Kenieche

Guergouri

2016

Mod. Phys. Lett. B

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The study of the influence of the surface and bulk parameters on the depletion region, created by electronic excitation, has been performed on p-type CdTe. The surface effect is given by two parameters: the energy of surface defects (Et) and their surface state density (Nt). However the volume effect is characterized by the diffusion length (Ln) and the concentration of acceptors (Na). This investigation demonstrated that, for high values of the excitation beam intensity, the depth of the depletion region (Z d ) decreases as Et and Nt decrease and when Na and Ln increase.

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Section: Introductionmentioning

confidence: 99%