Luminescence mechanism for Er³⁺ions in a silicon-rich nitride host under electrical pumping

Polycrystalline Er-doped Y3Ga5O12 nanofilms fabricated by atomic layer deposition on silicon at a low temperature and the exploration on electroluminescence performance

“…[7][8][9] Er 3+ ions are predestined for telecommunication applications due to the coincidence between their ∼1.53 μm emission from the 4 I 13/2 → 4 I 15/2 transition and the low-loss window in silica; Er-doped materials have been paid special attention to exploit efficient emitters. [10][11][12] However, the improvement of EL performance among these Si-based MOSLEDs from RE-doped materials has stagnated, which mainly resuls from the impact excitation of the luminescence centre by hot electrons and requires a minimum acceleration electric field and distance. 13 To overcome these obstacles, the focus has shifted to alternative host materials and/or fabrication methods to develop suitable Si-based matrices with more excitable Er 3+ ions.…”

Synthesis and Luminescent Properties of Silicon Nanocrystals

“…Unfortunately, it is well known that bulk silicon (Si) is an indirect bandgap semiconductor, making it an inefficient light emitter. Therefore, great efforts have been taken to obtain highly luminescent Si-based materials in order to get Si-based photonic devices, especially a light-emitting device [1][2][3]. Such circumstances have led to explore new options for converting silicon into a luminescent material.…”

Перераспределение атомов отдачи эрбия и кислорода и структура тонких приповерхностных слоев кремния, созданных высокодозной имплантацией аргона через поверхностные пленки Er и SiO-=SUB=-2-=/SUB=-

“…Для этого используется совместное легирование атомами Er и O. Однако полной оптической активации атомов Er таким способом пока не удается достичь. Помимо этого, современный научный интерес акцентирован на легированном Er пористом кремнии [18], структурах с нанокристаллическим кремнием [19], в диэлектрических матрицах [20][21][22] и структурах на основе прямозонных полупроводников, легированных Er [23,24]. Тем не менее продолжаются поиски путей оптимизации соотношения Er и O в комплексе Er : O x в кремнии [25,26].…”