Luminescence of a near-surface GaAs/AlAs heterojunction in AlAs-based heterostructures

Tunable electronic and optical properties of a type-II AlAs/GaS heterojunction: first-principles calculations

“…[20][21][22][23][24][25][26] AlAs, a wide bandgap III-V semiconductor material, has excellent physical properties and is an ideal material for optoelectronic devices such as light-emitting diodes. 27 Yao et al calculated the electronic and optical properties of the ZnSe/AlAs heterojunction based on first principles. The bandgap of the heterojunction can be effectively adjusted by applying an external electric field and strain, and the light absorption can also be improved.…”

The Structural, Electronic, and Optical Properties of a Novel Multilayer Heterostructure ZnSe/AlAs/GaAs: First‐Principles Study

“…The heterostructure formed by AlAs under the protective layer of GaAs has good optical properties. [ 11 ] ZnSe, AlAs, and GaAs have similar crystal structures, similar lattice constants, and have a high degree of match. Therefore, in this work, we use ZnSe, AlAs, and GaAs to build a novel multilayer heterostructure; predict its stacking order and interlayer distance; and study and analyze its binding energy, band structure, density of states (DOS), electron density difference, and optical properties by first‐principles calculations.…”