Luminescence of erbium implanted in various semiconductors: IV, III-V and II-VI materials

Favennec, P.N.; L'Haridon, H.; Salvi, M.; Moutonnet, D.; Guillou, Y. Le

doi:10.1049/el:19890486

Cited by 447 publications

(196 citation statements)

References 0 publications

Supporting

Mentioning

179

Contrasting

Unclassified

Order By: Relevance

“…The behavior found here, where the PL intensity increases by more than a factor of 3 from 300 to 10 K, is consistent with predominant data taken over a range of different rare-earth-semiconductor host systems. 27,28 In addition, decay transients of the UV emission are much faster in the PL measurements ͑on the order of nanoseconds͒ than in the CL measurements ͑on the order of milliseconds͒. Further experiments are needed to clarify these differences but they may simply be due to differences in the defects present in the starting materials.…”

Section: -mentioning

confidence: 99%

Ultraviolet photoluminescence from Gd-implanted AlN epilayers

Zavada

Nepal

Lin

et al. 2006

Applied Physics Letters

View full text Add to dashboard Cite

Deep ultraviolet emission from gadolinium ͑Gd͒-implanted AlN thin films has been observed using photoluminescence ͑PL͒ spectroscopy. The AlN epilayers were ion implanted with Gd to a total dose of ϳ6 ϫ 10 14 cm −2 . Using the output at 197 nm from a quadrupled Ti:sapphire laser, narrow PL emission was observed at 318 nm, characteristic of the trivalent Gd ion. A broader emission band, also centered at 318 nm, was measured with excitation at 263 nm. The PL emission intensity decreased by less than a factor of 3 over the sample temperature range of 10-300 K and decay transients were of the order of nanoseconds.

show abstract

Section: -mentioning

confidence: 99%

Ultraviolet photoluminescence from Gd-implanted AlN epilayers

Zavada

Nepal

Lin

et al. 2006

Applied Physics Letters

View full text Add to dashboard Cite

show abstract

“…It is well known that thermal quenching of the Er 3ϩ emission is significantly less in wide band gap materials. 31,32 In fact, the 1.54 m intensity is nearly constant up to 400 K in 6H SiC:Er (E G Ϸ3.0 eV͒. 33 One common explanation is that the Er-related trap position varies such that energy back transfer is greatly diminished in wide band gap hosts.…”

Section: Thermal Quenching Propertiesmentioning

confidence: 99%

Photoluminescence studies of erbium-doped GaAs under hydrostatic pressure

Culp

Hömmerich

Redwing

et al. 1997

Journal of Applied Physics

View full text Add to dashboard Cite

The photoluminescence properties of metal-organic chemical vapor deposition GaAs:Er were investigated as a function of temperature and applied hydrostatic pressure. The 4 I 13/2 → 4 I 15/2 Er 3ϩ emission energy was largely independent of pressures up to 56 kbar and temperatures between 12 and 300 K. Furthermore, no significant change in the low temperature emission intensity was observed at pressures up to and beyond the ⌫-X crossover at ϳ41 kbar. In contrast, Al x Ga 1Ϫx As:Er alloying studies have shown a strong increase in intensity near the ⌫-X crossover at xϳ0.4. These results suggest that the enhancement is most likely due to a chemical effect related to the presence of Al, such as residual oxygen incorporation, rather than a band structure effect related to the indirect band gap or larger band gap energy. Modeling the temperature dependence of the 1.54 m Er 3ϩ emission intensity and lifetime at ambient pressure suggested two dominant quenching mechanisms. At temperatures below approximately 150 K, thermal quenching is dominated by a ϳ13 meV activation energy process which prevents Er 3ϩ excitation, reducing the intensity, but does not affect the Er 3ϩ ion once it is excited, leaving the lifetime unchanged. At higher temperatures, thermal quenching is governed by a ϳ115 meV activation energy process which deactivates the excited Er 3ϩ ion, quenching both the intensity and lifetime. At 42 kbar, the low activation energy process was largely unaffected, whereas the higher activation energy process was significantly reduced. These processes are proposed to be thermal dissociation of the Er-bound exciton, and energy back transfer, respectively. A model is presented in which the Er-related electron trap shifts up in energy at higher pressure, increasing the activation energy to back transfer, but not affecting thermal dissociation of the bound exciton through hole emission. © 1997 American Institute of Physics. ͓S0021-8979͑97͒03912-1͔

show abstract

“…This makes GaN a suitable host for optical dopants introduced by ion implantation. Rare-earth (RE) elements have already been used in optoelectronic devices, such as the Nd:YAG laser, YOBr:Eu phosphors or Er in optical fibers [2]. These elements have partially filled inner 4f electron shells shielded by completely filled outer 5s and 5p shells.…”

Section: Introductionmentioning

confidence: 99%

Electrical Characterization of Metastable Defects Introduced in GaN by Eu-Ion Implantation

Auret

Meyer

Diale

et al. 2011

MSF

View full text Add to dashboard Cite

Gallium nitride (GaN), grown by HVPE, was implanted with 300 keV Eu ions and then annealed at 1000 oC . Deep level transient spectroscopy (DLTS) and Laplace DLTS (L-DLTS) were used to characterise the ion implantation induced defects in GaN. Two of the implantation induced defects, E1 and E2, with DLTS peaks in the 100 – 200 K temperature range, had DLTS signals that could be studied with L-DLTS. We show that these two defects, with energy levels of 0.18 eV and 0.27 eV below the conduction band, respectively, are two configurations of a metastable defect. These two defect states can be reproducibly removed and re-introduced by changing the pulse, bias and temperature conditions, and the transformation processes follow first order kinetics.

show abstract

Luminescence of erbium implanted in various semiconductors: IV, III-V and II-VI materials

Cited by 447 publications

References 0 publications

Ultraviolet photoluminescence from Gd-implanted AlN epilayers

Ultraviolet photoluminescence from Gd-implanted AlN epilayers

Photoluminescence studies of erbium-doped GaAs under hydrostatic pressure

Electrical Characterization of Metastable Defects Introduced in GaN by Eu-Ion Implantation

Contact Info

Product

Resources

About