Luminescence of Plastically Deformed Diamond in the Range 800–1050 nm

Васильев, Е. А.

doi:10.1007/s10812-019-00850-0

Cited by 6 publications

(2 citation statements)

References 18 publications

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“…This leads to a change in the electrical [4,5] and optical characteristics [3,[6][7][8] of the materials under study. In particular, the motion of dislocations that occurs during PD [9,10] changes the immediate environment of luminescence centers and affects the mechanisms of excitation energy transfer, which in turn causes a change in the luminescent properties of deformable materials [11][12][13].…”

Section: Introductionmentioning

confidence: 99%

Influence of Dislocations Move on Photoluminescence of Mn<sup>2+</sup> Ions with Various Local Surroundings in ZnS Single Crystals in the Process of Plastic Deformation

Prokofyev

Иванченко

Hnatushenko

2022

MSF

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The influence of plastic deformation on the change of the relative number of luminescence centers of Mn2+ ions with various local surroundings in ZnS single crystals at various wavelengths of the excitation light has been thoroughly studied. Taking into account that the emission of each individual photoluminescence band is due to the emission of manganese luminescence centers with a certain type of local symmetry, the use of the decomposition of the experimental photoluminescence spectra of Mn2+ ions in ZnS single crystals into individual bands and the subsequent analysis of changes in the photoluminescence spectra of each individual band allowed a detailed study of the effect of dislocation move on quantitative changes in emitting manganese luminescence centers of various types.

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Section: Introductionmentioning

confidence: 99%

Influence of Dislocations Move on Photoluminescence of Mn<sup>2+</sup> Ions with Various Local Surroundings in ZnS Single Crystals in the Process of Plastic Deformation

Prokofyev

Иванченко

Hnatushenko

2022

MSF

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“…In the last several decades, a research area based on polycrystalline chalcogenides [22][23][24][25][26][27][28][29][30][31][32][33] and their solid solutions for IR photodetectors and emitters [21][22][23][24][25][26] has been successfully developing. The optimization of technological processes is accompanied by the sensitization of materials and the creation of protective oxide shells [28][29][30][31][32] consisting of different chemical compounds, namely PbO x , PbSeO 3 , bi-and tetra-oxyselenites and oxyselenates (2PbO•PbSeO 3 , 4PbO•PbSeO 3 ) [29].…”

Section: Introductionmentioning

confidence: 99%

The Architectonics Features of Heterostructures for IR Range Detectors Based on Polycrystalline Layers of Lead Chalcogenides

Spivak¹,

Kononova²,

Kononov³

et al. 2021

Crystals

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A model is developed for the formation of porous intragranular architectonics of nanostructured polycrystalline layers of lead chalcogenides for photodetectors and IR emitters. The layers are obtained under the conditions of thermal evaporation in a quasi-closed volume by the “hot wall” method followed by sensitizing heat treatment in an iodine-containing atmosphere. Model concepts are developed considering the experimental results of studying the intragranular structure of lead chalcogenides through original combined AFM methods over the cross-section of porous grains (cores) encapsulated by an oxide shell (lateral force microscopy and local tunneling I–V spectroscopy).

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