Luminescence of selective optical pumping of excitons in GaSe

Capozzi, V.; Caneppele, S.; Montagna, M.

doi:10.1016/0022-2313(84)90328-4

Cited by 5 publications

(1 citation statement)

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“…The ratio of the strain localized GaSe PL to the band edge emission X E g is significantly enhanced by two orders of magnitude on the pillars. At a much lower laser power density of 44 nW/μm 2 , PL spectra measured at T = 3.5 K on the pillars exhibited a few strong and well-separated features without the broad background or additional defect-related bands that are often observed in WSe 2 and hBN. , For example, in Figure c, the PL spectrum collected from GaSe on a pillar shows a single peak X S at ∼1.90 eV (∼652 nm), about ∼0.15 eV below the well-studied GaSe band edge emission X E g at 2.05 eV. − Note that the emission energies of GaSe SPEs measured here are consistent with previous study on GaSe SPEs associated with strain developed on GaSe film on randomly distributed selenium clusters …”

Section: Resultsmentioning

confidence: 92%

Deterministic Localization of Strain-Induced Single-Photon Emitters in Multilayer GaSe

et al. 2023

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The nanoscale strain has emerged as a powerful tool for controlling single-photon emitters (SPEs) in atomically thin transition metal dichalcogenides (TMDCs). However, quantum emitters in monolayer TMDCs are typically unstable in ambient conditions. Multilayer TMDCs could be a solution, but they suffer from low quantum efficiency, resulting in low brightness of the SPEs. Here, we report the deterministic spatial localization of strain-induced SPEs in multilayer GaSe by nanopillar arrays. The strain-controlled quantum confinement effect introduces well-isolated sub-bandgap photoluminescence and corresponding suppression of the broad band edge photoluminescence. Clear photon-antibunching behavior is observed from the quantum dot-like GaSe sub-bandgap exciton emission at 3.5 K. The strain-dependent confinement potential and the brightness are found to be strongly correlated, suggesting a promising route for tuning and controlling SPEs. The comprehensive investigations of strain-engineered GaSe SPEs provide a solid foundation for the development of 2D devices for quantum photonic technologies.

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Section: Resultsmentioning

confidence: 92%

Deterministic Localization of Strain-Induced Single-Photon Emitters in Multilayer GaSe

et al. 2023

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Radiative Decay from Free and Bound Excitons in GaSe

Capozzi

Caneppele

Montagna

et al. 1985

Physica Status Solidi (b)

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Spontaneous excitonic luminescence in GaSe is investigated from 80 to 300 K and a t weak laser excitation intensity. Radiative recombinations of direct and indirect free excitons are clearly observed. The analysis of the emission lines as a function of the temperature, of the excitation intensity, and of laser energy permits to attribute two lines of the intrinsic luminecsence to the recombination of direct and indirect excitons bound to defect centres localized in the energy gap. On the basis of recent theories on exciton-impurity complexes, it is found that in the crystals the excitonic binding centres are deep neutral acceptors. From the dissociation energy of the bound excitons the ionization energy of the acceptor levels is estimated. Moreover, the measurements seem to indicate that thermal equilibrium between direct and indirect excitonic states is lacking below about 100 K.Die Spontane Exzitonenlumineszenz in GaSe wird zwischen 80 und 300 K und mit schwacher Laseranregungsintensitat untersucht. Strahlende Rekombination von direkten und indirekten freien Exzitonen wird deutlich beobachtet. Die Analyse der Emissionslinien in AbhLngigkeit von der Temperatur, der Anregungsintensitat und der Laserenergie erlaubt, zwei Linien der intrinsischen Lumineszenz der Rekombination von direkten und indirekten Exzitonen zuzuordnen, die an in der Energielucke lokalisierten Defektzentren gebunden sind. Auf der Grundlage neuerer Theorien zu Exziton-Storstellenkomplexen wird gefunden, dal3 in den untersuchten Kristallen die Exzitonenbindungszentren tiefe neutrale Akzeptoren sind. Aus der Dissoziationsenergie gebundener Exzitonen l&Bt sich die Ionisierungsenergie der Akzeptorniveaus berechnen. Dariiberhinaus scheinen die MeBergebnisse zu zeigen, dal3 unterhalb etwa 100 K kein thermisches Gleichgewicht mehr besteht zwischen direkten und indirekten Exzitonenzustiinden.

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Thermalization of photoexcited localized excitons in GaSe samples with stacking disorder

Capozzi

Maschke

1986

Phys. Rev. B

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Luminescence of selective optical pumping of excitons in GaSe

Cited by 5 publications

References 4 publications

Deterministic Localization of Strain-Induced Single-Photon Emitters in Multilayer GaSe

Deterministic Localization of Strain-Induced Single-Photon Emitters in Multilayer GaSe

Radiative Decay from Free and Bound Excitons in GaSe

Thermalization of photoexcited localized excitons in GaSe samples with stacking disorder

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