Luminescence Properties of AlN Ceramics and Its Potential Application for Solid State Dosimetry

Slow decay of a defect‐related emission band at 2.05 eV in AlN: Signatures of oxygen‐related DX states

“…Trinkler et al. discuss a 600 nm emission band, which shows at 8 K a fine structure smeared out to a broad band at room temperature. This band was tentatively assigned to Mn, but also the possible attribution to intrinsic defects formed by nitrogen vacancies and excess Al was mentioned.…”

Continuous wave OSL in bulk AlN single crystals

“…Possible applications of the AlN single crystals in solid state dosimetry of β-and UV-irradiation with methods of thermally and optically stimulated luminescence (TL and OSL) are shown in Ref. [12,13]. It is known that intrinsic and impurity defects of the anion sublattice (V N -and O N -centers) determine emission activity of AlN in the UV/Vis spectral range and help to detect and store dosimetric information [12][13][14][15].…”

“…[12,13]. It is known that intrinsic and impurity defects of the anion sublattice (V N -and O N -centers) determine emission activity of AlN in the UV/Vis spectral range and help to detect and store dosimetric information [12][13][14][15]. Recently within the framework of formal kinetics analysis of the TL processes involving the above mentioned centers the values of the activation energy and effective frequency factor have been obtained [10,13]; and dose dependences of the TL and OSL response have been analyzed [16,17].…”