Luminescence properties of BaMg2Si2O7:Eu2+,Mn2+

Aitasalo, T.; Hietikko, Anita; Hreniak, D.; Hölsä, Jorma; Lastusaari, Mika; Niittykoski, Janne; Stręk, W.

doi:10.1016/j.jallcom.2007.04.169

Cited by 27 publications

(12 citation statements)

References 12 publications

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“…The change of intensities of PL reveals that, the resonant transfer of energy between Eu 2+ and Mn 2+ Table 1 The peak position change of blue-light-emission in the Ba3MgSi2O8−xNxLix:0.02Eu 2+ , 0.1Mn 2+ (x = 0.0, 0.4, 0.6, 0.8). essentially affects the red-light-emission of Mn ion and change of intensity for each emission band in Ba 2 SiO 4 and Ba 3 MgSi 2 O 8 host so as to adjust quality of white-light, which has been confirmed for Eu 2+ -, Mn 2+ co-doped phosphors previously [29][30][31].…”

Section: Methodsmentioning

confidence: 55%

Green-light-emitting phase in Ba3MgSi2O8:Eu2+, Mn2+ full-color phosphor for white-light-emitting diodes via addition of Si3N4

Liu

Mao

et al. 2010

Journal of Alloys and Compounds

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Section: Methodsmentioning

confidence: 55%

Green-light-emitting phase in Ba3MgSi2O8:Eu2+, Mn2+ full-color phosphor for white-light-emitting diodes via addition of Si3N4

Liu

Mao

et al. 2010

Journal of Alloys and Compounds

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“…One may observe that the majority of published works are about Eu 2+ doped materials. Despite this majority, other materials containing different dopants, such as Tb 3+ [5][6][7][8], Eu 3+ [9,10], Mn 2+ [11,12] or Ti [13,14] also show efficient persistent luminescence. Among these materials, those doped with Tb 3+ ions perform the best though only very recently the first persistent luminescence mechanism based on solid experimental data for a Tb 3+ doped material was developed [5].…”

Section: Introductionmentioning

confidence: 99%

Persistent luminescence behavior of materials doped with Eu^2+ and Tb^3+

Rodrigues¹,

Brito²,

Hölsä³

et al. 2012

Opt. Mater. Express

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Abstract:In this work, the persistent luminescence mechanisms of Tb 3+ (in CdSiO 3 ) and Eu 2+ (in BaAl 2 O 4 ) based on solid experimental data are compared. The photoluminescence spectroscopy shows the different nature of the inter-and intraconfigurational transitions for Eu 2+ and Tb 3+ , respectively. The electron is the charge carrier in both mechanisms, implying the presence of electron acceptor defects. The preliminary structural analysis shows a free space in CdSiO 3 able to accommodate interstitial oxide ions needed by charge compensation during the initial preparation. The subsequent annealing removes this oxide leaving behind an electron trap. Despite the low band gap energy for CdSiO 3 , determined with synchrotron radiation UV-VUV excitation spectroscopy of Tb 3+ , the persistent luminescence from Tb 3+ is observed only with UV irradiation. The need of high excitation energy is due to the position of 1 and the ligand-to-metal charge-transfer transitions. Finally, the persistent luminescence mechanisms are constructed and, despite the differences, the mechanisms for Tb 3+ and Eu 2+ proved to be rather similar. This similarity confirms the solidity of the interpretation of experimental data for the Eu 2+ doped persistent luminescence materials and encourages the use of similar models for other persistent luminescence materials.

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“…The emission spectrum with the peak at 462, 535nm corresponds to the transition from the 4f 6 5d excited state to the 4f 7 ground state of a Eu 2+ ion, and the red emission band of 668 nm is assigned to 4 T→ 6 A transition of 3d 5 level of Mn 2+ ions which attributed to the energy transfer from Eu 2+ →Mn 2+ [14,22,23]. The energy transfer diagram of Sr 2 MgSiO 5 : Eu 2+ ,Mn 2+ is demonstrates at Fig.…”

Section: Resultsmentioning

confidence: 99%