2013
DOI: 10.1063/1.4816088
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Luminescence properties of Eu-doped GaN under resonant excitation and quantitative evaluation of luminescent sites

Abstract: We report a study on the Eu luminescence properties of Eu-doped GaN grown on a GaN substrate by organometallic vapor phase epitaxy. The site-selective excitation of Eu ions revealed the concentration of each luminescent site using the luminescence properties under resonant excitation. The quantitative evaluation of the Eu luminescent sites showed that more than 80% of Eu ions are incorporated into a high-symmetry site. However, the photoluminescence spectrum under indirect excitation is markedly different from… Show more

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Cited by 36 publications
(34 citation statements)
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“…For (1), eight Eu emission sites were found in a GaN:Eu single-crystal thin film grown by organometallic vapor phase epitaxy (OMVPE), 17,18 and a major emission site, along with the highest emission-efficiency site, was already identified in previous PL studies. 19,20 However, the physical reasons for the high efficiency and adaptability of these sites to the current injection are not clear. For (2), use of the pulse drive instead of the conventional DC drive of the LED has been found to improve the emission efficiency.…”
Section: Introductionmentioning
confidence: 99%
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“…For (1), eight Eu emission sites were found in a GaN:Eu single-crystal thin film grown by organometallic vapor phase epitaxy (OMVPE), 17,18 and a major emission site, along with the highest emission-efficiency site, was already identified in previous PL studies. 19,20 However, the physical reasons for the high efficiency and adaptability of these sites to the current injection are not clear. For (2), use of the pulse drive instead of the conventional DC drive of the LED has been found to improve the emission efficiency.…”
Section: Introductionmentioning
confidence: 99%
“…The PL properties of the Eu dopants in a GaN:Eu thin film have already been well-investigated using two types of photoexcitation: resonant (direct) excitation of Eu 4f levels and indirect excitation of the levels via the interband transition of the GaN host. 19,20 For the direct excitation, an advanced technique, combined excitation-emission spectroscopy (CEES), 22,23 in which the continuous tuning of the excitation energy and recording of the respective emission spectra provide two-dimensional PL spectral maps, revealed static characteristics of each of the eight Eu emission sites. In the following discussion, we refer to the characteristics in order to understand intensity of the emission sites for the current injection.…”
Section: Introductionmentioning
confidence: 99%
“…[1][2][3][4][5][6][7][8] The magnetic properties of GaN:Eu and other rare earth doped GaN dilute magnetic semiconductor (DMS) systems have also been extensively investigated for spintronic applications. [9][10][11][12][13][14][15] It is known that the Eu ions will incorporate into GaN in several defect environments, and that these defect environments play an important role on the spectral position of the Eu emission, [16][17][18][19][20][21][22][23][24] and in the ability for the Eu ions to capture energy from the GaN host during the recombination of electrons and holes. [7,18,22] Extensive spectroscopic work has provided ample evidence that the two main emitting centers, referred to as Eu1 and Eu2, are complexes consisting of a Eu ion on gallium site with either a nitrogen (V N ) or (V Ga ) gallium vacancy in close proximity.…”
Section: Introductionmentioning
confidence: 99%
“…9,10 One method for increasing the energy transfer efficiency is to co-dope with impurity atoms such as Mg 11,12 or Mg and Si. 13 These impurities have been shown to couple with the Eu ions, enhancing their emissivity.…”
mentioning
confidence: 99%
“…19 Each of these centers has a different emission and resonant excitation wavelength, and a distinct lifetime. 20 To avoid simultaneous contributions from various Eu centers, the PL and TR-PL measurements were carried out by resonantly exciting the majority center OMVPE 4 with a dye laser with wavelength 571 nm. 19 At this wavelength, light is not absorbed by the GaN substrate, and this enables excitation and detection through the backside of the sample.…”
mentioning
confidence: 99%