Luminescence properties of Li+ doped nanosized SnO2:Eu

Microwave-assisted solvothermal synthesis and characterization of SnO2:Eu3+ phosphors

“…In comparison with sol-gel derived SnO 2 :Eu 3+ in other studies [26,27], the phosphors obtained via the microwave-assisted solvothermal route were spherical in shape. The spherical phosphors have great potential for generating enhanced luminescent intensity due to reduced light scattering [28].…”

Photo-Induced conductivity of heterojunction GaAs/Rare-Earth doped SnO2

“…Broad blue emission has been recorded around 489 nm in a host matrix of zinc borosilicate glass 9 . Low quantum efficiency in the luminescence process may happen for rare-earth ions incorporated in SnO 2 , which is generally attributed to the difference between radius and charge of doping ions and Sn 4+ [10] . In order to avoid this problem, the materials production using nanoparticles as building blocks is recommended 10 , and the sol-gel process is appropriate 11,12 for this purpose.…”

“…Low quantum efficiency in the luminescence process may happen for rare-earth ions incorporated in SnO 2 , which is generally attributed to the difference between radius and charge of doping ions and Sn 4+ [10] . In order to avoid this problem, the materials production using nanoparticles as building blocks is recommended 10 , and the sol-gel process is appropriate 11,12 for this purpose. Low solubility limit of about 0.05 at% has been observed for Eu 3+ doping, and the excess of doping segregates at grain boundary layer 13 .…”

Resistividade do filme depositado via sol-gel e estado de oxidação do dopante Ce na matriz SnO2

“…Emissão no azul tem sido reportada em torno de 489 nm [8]. Diferenças no raio iônico de Ce 3+ e Sn 4+ torna difícil a incorporação em SnO 2, diminuindo a efi ciência quântica no processo de luminescência [9]. A formação de nanopartículas pelo processo sol-gel tem sido usada para diminuir este problema [1,4].…”