Luminescence properties of spark-processed SiC

Chang, Sung‐Sik; Sakai, Akira

doi:10.1016/j.matlet.2003.08.037

Cited by 38 publications

(11 citation statements)

References 25 publications

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“…Many efforts have been focused to produce light emitting devices (LEDs), PS Schottky diodes, gas sensors and solar cells using this material [6][7][8][9][10][11]. For example, Badawy [11] has reported that the solar cells based on porous silicon and covered by an oxide film, are stable against environmental attacks.…”

Section: Introductionmentioning

confidence: 99%

Electrical performance in iron-passivated porous silicon film

Rahmani

Moadhen

Zaïbi

et al. 2009

Journal of Alloys and Compounds

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Section: Introductionmentioning

confidence: 99%

Electrical performance in iron-passivated porous silicon film

Rahmani

Moadhen

Zaïbi

et al. 2009

Journal of Alloys and Compounds

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“…However, the structural defects depend on lattice mismatch [16]. The violet band at 415 nm, we suggest, should be the emission luminescence from 6H-SiC because of the position of the 415 nm band close to the known gap of the 6H-SiC polytype [18,19]. This band is associated with the emission luminescence from 6H-SiC, which bears on the SiC film quality.…”

Section: Resultsmentioning

confidence: 78%

The structure and photoluminescence properties of ZnO/SiC multilayer film on Si substrate

Chen

Zhuge

et al. 2007

Front. Mater. Sci. China

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ZnO/SiC multilayer film has been fabricated on a Si (111) substrate with a silicon carbide (SiC) buffer layer using the RF (radio frequency)-magnetron technique with targets of a ceramic polycrystalline zinc oxide (ZnO) and a composite target of pure C plate with attached Si chips on the surface. The as-deposited films were annealed at a temperature range of 600-1000°C under nitrogen atmosphere. The structure and photoluminescence (PL) properties of the samples were measured using X-ray diffractometry (XRD), Fourier transform infrared (FTIR) spectroscopy and PL spectrophotometry. By increasing the annealing temperature to 800°C, it is found that all the ZnO peaks have the strongest intensities, and the crystallinity of ZnO is more consistent on the SiC buffer layer. Further increase of the annealing temperature allows the ZnO and SiC layers to penetrate one another, which makes the interface between ZnO and SiC layer become more and more complicated, thus reduces the crystallinities of ZnO and SiC. The PL properties of a ZnO/ SiC multilayer are investigated in detail. It is discovered that the PL intensities of these bands reach their maximum after being annealed at 800°C. The PL peaks shift with an increase in the annealing temperature, which is due to the ZnO and SiC layers penetrating reciprocally. This makes the interface more impacted and complicated, which induces band structure deformation resulting from lattice deformation.

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“…After milling 40 h graphite, quartz and silicon have been completely amorphous and Fe3Si appeared which resulted from the formation of iron and silicon during the process of collision of grinding balls. It can be seen from Figure 5 that the silicon crystal and silicon carbide crystals were synthesized when the sample after milling 20h was treated under the condition of 2.5GPa, 873K and 2.5GPa,1273K [2][3][4][5][6],respectively (the keeping time of HPHT is 30mins). But the crystallization is not completed which due to the shorter time is kept under the condition of high temperature and high pressure.…”

Section: A the Amorphous And Characterization Of Samples Under High-mentioning

confidence: 99%

Study on the Structure Transition of Graphite and Quartz Doped with Silicon under High Temperature and High Pressure

Wang¹,

Liu²,

Jing³

et al. 2015

Proceedings of the 2nd International Conference on Civil, Materials and Environmental Sciences

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Abstract-A new laboratory method has been suggested for synthesizing coesite in the Earth's crust by considering the similar characteristics of local collisions and shearing strength between the earth's plates and the high-energy mechanical ball milling (MBM),combining the high static pressure and high temperature technique，and using the mixtures of α-quartz and graphite as the initial materials, in which Silicon is mixed by the best quality ratio. The lowest pressure and temperature condition for synthesizing coesite is 3.8GPa and 873K.Keywords-α-quartz-graphite ； Coesite; High temperature and high pressure. I INTRODUCTIONQuartz is a very common natural mineral and can form a number of different variants of the structure under different temperature and pressure conditions. According to the quartz variant the surrounding environment pressure and temperature can be qualitatively estimated in the Geology. Coesite is the UHP variant of the quartz and a kind of effective minerals indicating the pressure. In the nature, graphite and quartz are sometimes born in natural minerals and another kind of UHP variant of the graphite -diamond is the minerals indicating higher pressure. Among the rocks on the earth surface diamond has been found in the form of associated with the coesite or inclusions. To explain the existence of coesite on the earth surface and at the same time to confirm whether or not accompanied by the diamond produced in the process of their formation and the existence of the mutual influence, we used high-energy mechanical ball milling combining the high static pressure and high temperature method to simulate the formation mechanism of coesite and diamond in the Earth's surface by considering the similarity of local collisions and shear stress between the earth plate collision and the high-energy mechanical ball milling (MBM).We concluded that the longer the milling time, the smaller the sample size, the better the effect of amorphous and the easier the synthesis of coesite and diamond. However, the amorphous of graphite is one of the difficulties in the work. Graphite and α-quartz mixed powder can be close to completely amorphous after milling 120h. According to the literature [1] reported that graphite amorphous time can be greatly shortened by adding silicon in graphite and α-quartz mixtures, the time of the best quality is the ratio of Si: C: SiO 2 = 65:14:21. So in order to improve the amorphous graphite, Silicon is joined into the α-quartz powder mixed with graphite. While the silicon content in the earth ranks second and the 65% of the silicon in such mixtures enables the ratio of silicon and carbon to be closer to the real situation in the Earth's interior and to simulate changes of the structure of the material in the Earth realistically. This can provide experimental basis for the research on the mineralization condition of coesite in the Earth surface and Ultra High-pressure (UHP) metamorphism and artificial simulation of the symbiotic of diamond and coesite under higher pressure. II EXPERIMEN...

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Luminescence properties of spark-processed SiC

Cited by 38 publications

References 25 publications

Electrical performance in iron-passivated porous silicon film

Electrical performance in iron-passivated porous silicon film

The structure and photoluminescence properties of ZnO/SiC multilayer film on Si substrate

Study on the Structure Transition of Graphite and Quartz Doped with Silicon under High Temperature and High Pressure

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