1996
DOI: 10.1016/0925-3467(95)00045-3
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Luminescence properties of Y2O3 single crystals doped with Pr3+ or Tm3+ and codoped with Yb3+, Tb3+ or Ho3+ ions

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Cited by 125 publications
(61 citation statements)
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“…This is in good agreement with values reported for bulk Tm 3+ :Y 2 O 3 with lifetimes of 4.15 ms (1 at.% Tm 3+ [2]) and 3.2 ms (2 at.% Tm 3+ [20]). Figure 4 shows the emission spectrum measured with an ANDO AQ6375 optical spectrum analyser using a spectral bandwidth of 2 nm, along with data observed for bulk crystal [20] for comparison. The spectral profiles of waveguide and bulk are almost identical.…”
Section: Spectroscopic Characterizationsupporting
confidence: 81%
“…This is in good agreement with values reported for bulk Tm 3+ :Y 2 O 3 with lifetimes of 4.15 ms (1 at.% Tm 3+ [2]) and 3.2 ms (2 at.% Tm 3+ [20]). Figure 4 shows the emission spectrum measured with an ANDO AQ6375 optical spectrum analyser using a spectral bandwidth of 2 nm, along with data observed for bulk crystal [20] for comparison. The spectral profiles of waveguide and bulk are almost identical.…”
Section: Spectroscopic Characterizationsupporting
confidence: 81%
“…4). The PL spectra of Tm 3+ ions in Y 2 O 3 ceramic observed in visible and near-infrared region are quite similar to the spectra of Tm 3+ ions in Y 2 O 3 single crystals [9] . This similarity indicates that Tm 3+ ions locate at Y 3+ sites in the Y 2 O 3 lattice in the ceramic state, as in the case of single crystal.…”
Section: -3supporting
confidence: 58%
“…Their spectrum is quite similar to that in Fig. 3, indicating that the Tm 3+ ions in the Y 3+ site with C2 symmetry in the single crystal [9] are also present in our ceramic. The energy level diagram of Tm 3+ ion in the Y 2 O 3 ceramic shown in Fig.…”
supporting
confidence: 61%
“…Significant research in the growth and characterization of both Gd 2 O 3 and Y 2 O 3 has been undertaken over the past few years because of their several relevant physical properties and technical applications such as: high melting point [1]; high mechanical strength [2]; high dielectric constant (in the range [14][15][16][17][18] [3]; a rather high refractive index n ≅ 2 [4]; and a very good protective behavior as a coating in reactive severe environment [5]. Both are promising materials for electronic applications to replace SiO 2 in metal-oxide-semiconductor (MOS) heterostructures used in the MOS transistor [6].…”
Section: Introductionmentioning
confidence: 99%