Luminescent Coupling in GaAs/GaInNAsSb Multijunction Solar Cells

Derkacs, Daniel; Bilir, D. Taner; Sabnis, V.A.

doi:10.1109/jphotov.2012.2213579

Cited by 61 publications

(42 citation statements)

References 14 publications

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“…The simulation results produced a best fit to the measured data with simulation values of between 0.56 and 0.58, very close to the value calculated using a lumped model analysis, which was 0.55 [1]. Fig 2. shows the comparison of the 2J cell simulation results with set to different values.…”

Section: Model Verificationsupporting

confidence: 74%

“…This value is considered close to the coupling factors in real cells and suffices to demonstrate the effects of luminescent coupling [1] [3]. For comparison, we simulated the same cell under two other conditions.…”

Section: Simulations With 3-d Luminescent Couplingmentioning

confidence: 83%

“…This effect increases overall device current if the lower band gap subcell is current-limiting, and can increase voltage even in an overdriven subcell [1] [2]. These effects are important in the accurate modeling of multijunction devices, especially in distributed modeling where local effects can vary greatly due to non-uniform illumination.…”

Section: Introductionmentioning

confidence: 99%

“…Previous research has presented analytical models describing the effects of luminescent coupling [1] [2] [3]. A DC lumped circuit model has also been demonstrated in modeling the luminescent coupling effects [3].…”

Section: Introductionmentioning

confidence: 99%

See 3 more Smart Citations

3-D modeling of luminescent coupling effects in multijunction concentrator solar cells

Jia

Suarez²,

Bilir³

et al. 2014

AIP Conference Proceedings

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Section: Model Verificationsupporting

confidence: 74%

Section: Simulations With 3-d Luminescent Couplingmentioning

confidence: 83%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

3-D modeling of luminescent coupling effects in multijunction concentrator solar cells

Jia

Suarez²,

Bilir³

et al. 2014

AIP Conference Proceedings

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“…This could be a result of luminescent coupling from the AlGaAs filter into the InGaAsN(Sb) absorber 11 and will not necessarily contribute photocurrent in an operating four-junction device, unless the junctions with larger band gaps are producing an excess of photocurrent. 18 To characterize the InGaAsN(Sb) junctions in a nearly as-grown condition with minimal annealing, a set of "fast-process" samples were prepared from 5m m× 5m mdies cleaved from the as-grown wafer. These samples were prepared with ohmic indium contacts to the top and bottom faces and are sufficient for quantum efficiency measurements, but the contacts are not adequate for operation at high currents.…”

Section: Carrier Collectionmentioning

confidence: 99%

Design of thin InGaAsN(Sb) n - i - p junctions for use in four-junction concentrating photovoltaic devices

et al. 2017

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READ THESE TERMS AND CONDITIONS CAREFULLY BEFORE USING THIS WEBSITE.http://nparc.nrc-cnrc.gc.ca/eng/copyright Vous avez des questions? Nous pouvons vous aider. Pour communiquer directement avec un auteur, consultez la première page de la revue dans laquelle son article a été publié afin de trouver ses coordonnées. Si vous n'arrivez pas à les repérer, communiquez avec nous à PublicationsArchive-ArchivesPublications@nrc-cnrc.gc.ca. Questions?Contact the NRC Publications Archive team at PublicationsArchive-ArchivesPublications@nrc-cnrc.gc.ca. If you wish to email the authors directly, please see the first page of the publication for their contact information. NRC Publications Archive Archives des publications du CNRCThis publication could be one of several versions: author's original, accepted manuscript or the publisher's version. / La version de cette publication peut être l'une des suivantes : la version prépublication de l'auteur, la version acceptée du manuscrit ou la version de l'éditeur. NRC Publications Record / Notice d'Archives des publications de CNRC:http://nparc.nrc-cnrc.gc.ca/eng/view/object/?id=e7c07e6d-fdaa-432b-9de5-1d417eac1341 http://nparc.nrc-cnrc.gc.ca/fra/voir/objet/?id=e7c07e6d-fdaa-432b-9de5-1d417eac1341Design of thin InGaAsN(Sb) n-i-p junctions for use in four-junction concentrating photovoltaic devices Abstract. Four-junction solar cells for space and terrestrial applications require a junction with a band gap of ∼1e Vfor optimal performance. InGaAsN or InGaAsN(Sb) dilute nitride junctions have been demonstrated for this purpose, but in achieving the 14 mA∕cm 2 short-circuit current needed to match typical GaInP and GaAs junctions, the open-circuit voltage (V OC ) and fill factor of these junctions are compromised. In multijunction devices incorporating materials with short diffusion lengths, we study the use of thin junctions to minimize sensitivity to varying material quality and ensure adequate transmission into lower junctions. An n-i-p device with 0.65-μm absorber thickness has sufficient short-circuit current, however, it relies less heavily on fieldaided collection than a device with a 1-μm absorber. Our standard cell fabrication process, which includes a rapid thermal anneal of the contacts, yields a significant improvement in diffusion length and device performance. By optimizing a four-junction cell around a smaller 1-sun short-circuit current of 12.5 mA∕cm 2 , we produced an InGaAsN(Sb) junction with open-circuit voltage of 0.44 V at 1000 suns (1 sun ¼ 100 mW∕cm 2 ), diode ideality factor of 1.4, and sufficient light transmission to allow >12.5 mA∕cm 2 in all four subcells.

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Photon Recycling in Semiconductor Thin Films and Devices

Cheng

O’Carroll

2021

Advanced Science

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Photon recycling (PR) plays an important role in the study of semiconductor materials and impacts the properties of their optoelectronic applications. However, PR has not been investigated comprehensively and it has not been demonstrated experimentally in many different kinds of semiconductor materials and devices. In this review paper, first, the authors introduce the background of PR and describe how this phenomenon was originally identified in semiconductors. Then, the theory and modelling of PR is reviewed and some of the important parameters that are used to quantify PR are highlighted. Next, a variety of the methods used to achieve and characterize PR in materials and devices are discussed. Examples of how the performance parameters of different types of optoelectronic devices are affected by PR are described. Finally, a summary of the roles of PR in semiconductor materials and devices and an outlook on how PR can be used to solve existing problems and challenges in the field of optoelectronics are provided. From this review, it is apparent that PR can have a positive impact on optoelectronic device performance, and that further in‐depth theoretical and experimental studies are needed to rigorously demonstrate the advantages and importance of PR.

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Luminescent Coupling in GaAs/GaInNAsSb Multijunction Solar Cells

Cited by 61 publications

References 14 publications

3-D modeling of luminescent coupling effects in multijunction concentrator solar cells

3-D modeling of luminescent coupling effects in multijunction concentrator solar cells

Design of thin InGaAsN(Sb) n - i - p junctions for use in four-junction concentrating photovoltaic devices

Photon Recycling in Semiconductor Thin Films and Devices

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