Luminescent properties of bismuth centres in aluminosilicate optical fibres

Bulatov, L. I.; Mashinskii, V. M.; Dvoirin, Vladislav V; Кустов, Е. Ф.; Dianov, Evgenii M

doi:10.1070/qe2010v040n02abeh014198

Cited by 19 publications

(6 citation statements)

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“…The absorption bands at 700 and 1000 nm reported for glasses co-doped with Bi and Al seem to disappear here, which can be attributed to Bi-associated active centers combined with Al [15]. The absorption bands at 822, 870 and 930 nm were also observed in [16,17], which confirms the existence of Bi in the core of the fiber. By comparing our fiber absorption spectrum around 800 nm (due to Bi existence) with that in [16], where the fiber was also made by the MCVD process and the Bi 2 O 3 concentration was lower than 0.013 mol%, we see that the Bi 2 O 3 concentration in our fiber is less that 0.01 mol%.…”

Section: Resultssupporting

confidence: 63%

Linear and nonlinear optical properties of Bi-doped germano-silicate optical fiber

Fan¹,

Kim²,

Htein³

et al. 2012

J. Opt.

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An optical fiber doped with bismuth was fabricated using the modified chemical vapor deposition method. Both the linear and nonlinear optical properties of the glass fiber were investigated. The resonant nonlinear refractive index was found to be around 3 × 10 −15 m 2 W −1 , which is five orders of magnitude larger than the non-resonant nonlinear refractive index of commercially available single-mode silica fiber. The high resonant nonlinearity of the Bi-doped fiber was attributed as arising from Si-related bismuth active centers.

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Section: Resultssupporting

confidence: 63%

Linear and nonlinear optical properties of Bi-doped germano-silicate optical fiber

Fan¹,

Kim²,

Htein³

et al. 2012

J. Opt.

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“…Such a model of the silica glass with aluminum and germa nium co dopants has been recently discussed in [10]. Note that the presence of two types of bismuth defects in the silica glass with aluminum and germanium co dopants that are responsible for the IR luminescence was earlier discussed in [11,12].…”

Section: Discussionmentioning

confidence: 98%

Specific features of ir photoluminescence of bismuth-doped silicon dioxide synthesized by plasmachemical method

Bazakutsa

Butov

Savel’ev

et al. 2012

J. Commun. Technol. Electron.

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Photoluminescence spectra and kinetics of the bismuth doped silicon dioxide are studied in the wavelength interval 0.7-1.6 μm in the absence and in the presence of aluminum co doping. It is demon strated that a broad spectral band that is centered at 1420 nm and exhibits a decay time of 600 μs dominates in the long wavelength part of the spectral interval regardless of the presence of aluminum in the directly deposited unfused bismuth doped silicon dioxide. The melting of the plasma deposited aluminosilicate material leads to the shift of the center of the band to a wavelength of 1100 nm, whereas the melting of the aluminum free material weakly affects the spectrum. It is demonstrated that an increase in the temperature to 700 K causes an increase in the intensity of the band centered at a wavelength of 1420 nm, which is most clearly seen under the excitation at a wavelength of 808 nm. An increase in the intensity is accompanied by an increase in the lifetime and a sharp decrease in the intensity of the band peaked at a wavelength of 825 nm. The spectral features and kinetics of photoluminescence are interpreted in the framework of the three level scheme of electronic transitions for two types of bismuth defects that simultaneously exist in the aluminosil icate materials and exhibit close energies of the stationary electronic states.

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“…According to this assumption, the rise of the temperature leads to the depletion of the low (lasing) sub-level population that in turn leads to the reduced efficiency of the fiber laser, as it was observed in the laser experiments. On the other hand, in [14] the same group discussed the opposite point of view, which consists in introducing of two PL centers in different environments, namely, the Bi-ion in tetrahedral and octahedral environments. Then, to explain the low laser efficiency at room temperature, it is possible to assume the resonance or phonon assisted ET between two centers.…”

Section: Cw Experimentsmentioning

confidence: 99%

Photoluminescence in Ga/Bi co-doped silica glass

Razdobreev¹,

Hamzaoui²,

Arion³

et al. 2014

Opt. Express

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Abstract:Bismuth-Gallium co-doped silica glass fiber preform was prepared from nano-porous silica xerogels using a conventional solution doping technique with a heterotrinuclear complex and subsequent sintering. Ga-connected optical Bismuth active center (BAC) was identified as the analogue of Al-connected BAC. Visible and infrared photoluminescence (PL) were investigated in a wide temperature range of 1.46 -300 K. Based on the results of the continuous wave (CW) and time resolved (TR) spectroscopy we identify the centers emitting in the spectral region of 480 -820 nm as Bi + ions. The near infrared (NIR) PL around 1100 nm consists of two bands. While the first one can be ascribed to the transition in Bi + ion, the second band is presumably associated to defects. We put in evidence the energy transfer (ET) between Bi + ions and the second NIR emitting center via quadrupole-quadrupole and dipole-quadrupole mechanisms of interactions. Finally, we propose the energy level diagram of Bi + ion interacting with this defect. Electron. 44, 834-840 (2008). 14. L. Bulatov, V. Mashinsky, V. Dvoyrin, E. Kustov, and E. Dianov, "Luminescent properties of bismuth centres in aluminosilicate optical fibers," Quantum Electron. 40, 153-159 (2010).

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Luminescent properties of bismuth centres in aluminosilicate optical fibres

Cited by 19 publications

References 0 publications

Linear and nonlinear optical properties of Bi-doped germano-silicate optical fiber

Linear and nonlinear optical properties of Bi-doped germano-silicate optical fiber

Specific features of ir photoluminescence of bismuth-doped silicon dioxide synthesized by plasmachemical method

Photoluminescence in Ga/Bi co-doped silica glass

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