Luminescent Properties of Nanopowder and Single‐Crystalline Films of TbAG:Ce Garnet

Bolek, Paulina; Zeler, Justyna; Gorbenko, V.; Zorenko, T.; Popielarski, P.; Bartosiewicz, Karol; Osvet, Andres; Batentschuk, Miroslaw; Zych, Eugeniusz; Zorenko, Yuriy

doi:10.1002/pssb.201900495

Cited by 4 publications

(4 citation statements)

References 25 publications

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“…[14,26] The Ce 3þ emission spectrum in TbAG:Ce garnet comparing with YAG:Ce counterpart is significantly shifted from 540 to 560 nm. [27,28] The emission redshift is related to increased crystal-field splitting and consequently the larger split of 5d energy level of Ce 3þ ions and the increased Stokes shifts due to the replacement of Y ions (r VIII ¼ 1.019 Å) by larger Tb 3þ (r VIII ¼ 1.04 Å) ions in dodecahedral sites of the garnet structure. [29,30] Thus, we observe the redshift of Ce 3þ emission maxima in S3.1 sample of TbAG:Ce SCF/ YAG:Ce CCC to 565 and 591 nm in comparison with 559 and 584 nm for YAG:Ce S3 substrate, meanwhile the FWHM increased from 155 to 182 nm, respectively.…”

Section: Resultsmentioning

confidence: 99%

Composite Color Converters Based on Tb₃Al₅O₁₂:Ce Single‐Crystalline Films and Y₃Al₅O₁₂:Ce Crystal Substrates

Markovskyi

Gorbenko

Zorenko

et al. 2021

Physica Rapid Research Ltrs

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The development of a novel composite phosphor converter based on singlecrystalline films of Tb 3 Al 5 O 12 :Ce garnet and Y 3 Al 5 O 12 :Ce single-crystal substrate is reported. The liquid phase epitaxy growth method is chosen for the fabrication of the Tb 3 Al 5 O 12 :Ce/Y 3 Al 5 O 12 :Ce epitaxial structures with excellent photoconversion properties for application in white light-emitting diodes (LEDs). The influence of Ce 3þ concentration and thickness of Y 3 Al 5 O 12 :Ce substrate as well as the thickness of Tb 3 Al 5 O 12 :Ce films on the photoconversion properties is investigated for the construction of warm white LEDs prototypes based on the developed composite phosphor converters.

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Section: Resultsmentioning

confidence: 99%

Composite Color Converters Based on Tb₃Al₅O₁₂:Ce Single‐Crystalline Films and Y₃Al₅O₁₂:Ce Crystal Substrates

Markovskyi

Gorbenko

Zorenko

et al. 2021

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“…[ 6,7 ] Furthermore, TbAG:Ce in the form of powder, ceramics, and single crystal is considered to be a promising candidate for the new generation of efficient scintillators as well as a novel phosphor for warm WLEDs due to possessing high thermal stability of the Ce 3+ luminescence. [ 8–14 ]…”

Section: Figurementioning

confidence: 99%

“…However, TbAG can be fabricated in a pure garnet phase using low‐temperature synthesis methods, such as solid‐state sintering, sol–gel combustion, and liquid phase epitaxy (LPE). [ 10,14,24,25 ]…”

Section: Figurementioning

confidence: 99%

New Efficient Scintillating and Photoconversion Materials Based on the Self‐Flux Grown Tb₃Al₅O₁₂:Ce Single Crystal

Bartosiewicz

Markovskyi

Zorenko

et al. 2020

Physica Rapid Research Ltrs

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Placing the yellow-red emitting luminescent materials directly on top of the blue light-emitting diode (LED) enables for partial conversion of the blue light to red and green or yellow/orange light, and as a result, white light is generated. [1] In 1996, Y 3 Al 5 O 12 :Ce (YAG:Ce) was discovered as an efficient photoconverter (PC) white LED (WLED) phosphor and still is the most widely applied WLED phosphor. [2] To improve cold white light temperature and create warmer WLED, orange or red-emitting phosphor should be used. The substitution of Y for Tb in YAG:Ce leads to the redshift of the Ce 3þ emission. Moreover, Tb 3þ ions efficiently transfer the excitation energy toward Ce 3þ activator, which significantly enhances the luminescence performance of (Tb,Y) 3 Al 5 O 12 :Ce phosphor. [3,4] Consequently, warmer and brighter WLED can be obtained concerning YAG:Ce-based WLED. [5] The redshifted Ce 3þ emission in Tb 3 Al 5 O 12 :Ce (TbAG: Ce) is located at the higher sensitivity range in the scintillation detectors that significantly improve their detection limit. [6,7] Furthermore, TbAG:Ce in the form of powder, ceramics, and single crystal is considered to be a promising candidate for the new generation of efficient scintillators as well as a novel phosphor for warm WLEDs due to possessing high thermal stability of the Ce 3þ luminescence. [8-14] The micro-pulling-down (μ-PD) method is a suitable technology for fast, cheap, and good quality material production for PC WLED [15] and customized size scintillators. [16,17] In the μ-PD method, the crystal is grown from the melt; hence, incongruently melting systems are difficult to fabricate in the pure target phase. [18-23] According to the Al 2 O 3-Tb 2 O 3 phase diagram, the Tb 3 Al 5 O 12 melts incongruently at 2113 K; hence, TbAlO 3 is the most stable phase in this system. [23] Moreover, the crystallization of TbAG consumes relatively more Tb 2 O 3 than contained in the melt. This indicates that the crystallization of TbAG from the melt under strong non-equilibrium conditions might be possible by enriching the melt with alumina. Excess of Al 2 O 3 changes the stoichiometric composition of TbAG and lowers liquidus temperature, increasing the thermodynamic stability of TbAG composition. The segregation coefficients of Tb 3þ and Al 3þ ions in Tb 3 Al 5 O 12 are very far from one. This results in a significant difference between melt and crystal compositions. [19] The ratio of Tb to Al in Tb 3 Al 5 O 12 is 3:5, whereas in TbAlO 3 is 1:1. Consequently, in the Al-rich melt, Tb can be easily surrounded by the proper amount of Al increasing probability of Tb 3 Al 5 O 12 crystallization. However, TbAG can be fabricated in a pure garnet phase using low-temperature synthesis methods, such as solid-state sintering, sol-gel combustion, and liquid phase epitaxy (LPE). [10,14,24,25] This research deals with the melt growth of TbAG:Ce single crystal using the μ-PD method. The crystal was grown from the Tb 3 Al 5 O 12 :Ce nonstoichiometric melt enriched with Al 2 O 3 used as a self-fl...

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“…This paper focuses on the aluminate garnet scintillators, mainly because they are easier to prepare and, therefore, cheaper. Their easier preparation also offers more considerable variability in the preparation technologies and the incorporation of different co‐dopants (Bolek et al, 2020; Buryi et al, 2019; Gorbenko, Zorenko, Paprocki, et al, 2017; Gorbenko, Zorenko, Witkiewicz, et al, 2017; Kucera et al, 2016; Kucera & Prusa, 2017; Nikl et al, 2014; Witkiewicz‐Lukaszek et al, 2018; Witkiewicz‐Lukaszek et al, 2020).…”

Section: Introductionmentioning

confidence: 99%

Overview of S(T)EMelectron detectors with garnet scintillators: Some potentials and limits

Schauer

Lalinský

Kučera

2020

Microscopy Res & Technique

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The paper is focused on a complete configuration and design of a scintillation electron detector in scanning electron and/or scanning transmission electron microscopes (S(T)EM) with garnet scintillators. All processes related to the scintillator and light guide were analyzed. In more detail, excitation electron trajectories and absorbed energy distributions, efficiencies and kinetics of scintillators, as well as the influence of their anti-charging coatings and their substrates, assigned optical properties, and light guide efficiencies of different configurations were presented and discussed. The results indicate problems with low-energy detection below 1 keV when the scandium conductive coating with a thickness of only 3 nm must be used to allow electron penetration without significant losses. It was shown that the short rise and decay time and low afterglow of LuGdGaAG:Ce liquid-phase epitaxy garnet film scintillators guarantee a strong modulation transfer function of the entire imaging system resulting in a contrast transfer ability up to 0.6 lp/pixel. Small film scintillator thicknesses were found to be an advantage due to the low signal self-absorption. The optical absorption coefficients, refractive indices, and the mirror optical reflectance of materials involved in the light transport to the photomultiplier tube photocathode were investigated. The computer-optimized design SCIUNI application was used to configure the optimized light guide system. It was shown that nonoptimized edgeguided systems possess very poor light guiding efficiency as low as 1%, while even very complex optimized ones can achieve more than 20%.

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Luminescent Properties of Nanopowder and Single‐Crystalline Films of TbAG:Ce Garnet

Cited by 4 publications

References 25 publications

Composite Color Converters Based on Tb₃Al₅O₁₂:Ce Single‐Crystalline Films and Y₃Al₅O₁₂:Ce Crystal Substrates

Composite Color Converters Based on Tb₃Al₅O₁₂:Ce Single‐Crystalline Films and Y₃Al₅O₁₂:Ce Crystal Substrates

New Efficient Scintillating and Photoconversion Materials Based on the Self‐Flux Grown Tb₃Al₅O₁₂:Ce Single Crystal

Overview of S(T)EMelectron detectors with garnet scintillators: Some potentials and limits

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Luminescent Properties of Nanopowder and Single‐Crystalline Films of TbAG:Ce Garnet

Cited by 4 publications

References 25 publications

Composite Color Converters Based on Tb3Al5O12:Ce Single‐Crystalline Films and Y3Al5O12:Ce Crystal Substrates

Composite Color Converters Based on Tb3Al5O12:Ce Single‐Crystalline Films and Y3Al5O12:Ce Crystal Substrates

New Efficient Scintillating and Photoconversion Materials Based on the Self‐Flux Grown Tb3Al5O12:Ce Single Crystal

Overview of S(T)EMelectron detectors with garnet scintillators: Some potentials and limits

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Composite Color Converters Based on Tb₃Al₅O₁₂:Ce Single‐Crystalline Films and Y₃Al₅O₁₂:Ce Crystal Substrates

Composite Color Converters Based on Tb₃Al₅O₁₂:Ce Single‐Crystalline Films and Y₃Al₅O₁₂:Ce Crystal Substrates

New Efficient Scintillating and Photoconversion Materials Based on the Self‐Flux Grown Tb₃Al₅O₁₂:Ce Single Crystal