Luminescent properties of Zn2SiO4 phosphors doped with Mn2+.

Park, Eung Suk; Cho, Tae Hwan; Chang, Ho

doi:10.2978/jsas.11.3_205

Cited by 2 publications

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“…In particular, the luminescent properties of inorganic phosphors have been widely investigated for commercial use in flat panel displays(FPDs) in the recent years [2,3] Up to the present time, the commercial Mn-doped Zn2SiO4 green phosphors have been synthesized mainly with a solid-state reaction method [7]. In the solid-state reaction method, a high reaction temperature, a long heating time, and a milling process are required.…”

Section: Introductionmentioning

confidence: 99%

Synthesis of Mn-doped Zn₂SiO₄phosphor particles by solid-state method at relatively low temperature and their photoluminescence characteristics

Lee¹,

Choi²,

Lee³

2010

Journal of the Korea Academia-Industrial cooperation Society

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Mn-doped Zn2SiO4 phosphor particles having submicrometer sizes were synthesized by a solid-state reaction method using methyl hydrogen polysiloxane-treated ZnO, fumed SiO2 and various Mn sources. The crystallization and photoluminescent properties of the phosphor particles were investigated by X-ray diffraction(XRD), scanning electron microscope(SEM), and by their photoluminescence(PL) spectra. Due to the effect of the dispersion and coherence of the methyl hydrogen polysiloxane-treated ZnO, the Mn-doped Zn2SiO4 particles were successfully obtained by a solid state method at 1000℃, and the maximum PL intensity of the prepared particles under vacuum ultra violet(VUV) excitation occurred at a Mn concentration of 0.02mol and a sintering temperature of 1000℃.

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Section: Introductionmentioning

confidence: 99%

Synthesis of Mn-doped Zn₂SiO₄phosphor particles by solid-state method at relatively low temperature and their photoluminescence characteristics

Lee¹,

Choi²,

Lee³

2010

Journal of the Korea Academia-Industrial cooperation Society

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Preparation of Zn₂SiO₄:Mn²⁺ films by electrical discharge pulse method

Hattori

Suzuki

Goto

et al. 2017

Phys. Status Solidi C

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The use of electrical discharge pulses is a new method to prepare thin films. The conventional phosphor thin film preparation technology uses rf sputtering or vacuum vapor deposition. However, thin films prepared by conventional methods are formed in amorphousness on the substrates. In contrast, this new method uses the electrical discharge energy between an electrode and a conductive substrate. When an electrical pulse is discharged between the electrode and the substrate, the electrode material, which is zinc and phosphor, moves to the substrate. Consequently, this new method can be used to produce light‐emitting devices. In this study, we used the phosphor Zn2SiO4:Mn2+. We were able to prepare luminescent Zn2SiO4:Mn2+ films using a discharge currant of 10 A, at a voltage of 80 V and weight ratio of zinc to Zn2SiO4:Mn2+ of 6:4. We evaluated the resultant films with scanning electron microscopy (SEM) and X‐ray diffraction (XRD).

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Luminescent properties of Zn2SiO4 phosphors doped with Mn2+.

Cited by 2 publications

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Synthesis of Mn-doped Zn₂SiO₄phosphor particles by solid-state method at relatively low temperature and their photoluminescence characteristics

Synthesis of Mn-doped Zn₂SiO₄phosphor particles by solid-state method at relatively low temperature and their photoluminescence characteristics

Preparation of Zn₂SiO₄:Mn²⁺ films by electrical discharge pulse method

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Luminescent properties of Zn2SiO4 phosphors doped with Mn2+.

Cited by 2 publications

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Synthesis of Mn-doped Zn2SiO4phosphor particles by solid-state method at relatively low temperature and their photoluminescence characteristics

Synthesis of Mn-doped Zn2SiO4phosphor particles by solid-state method at relatively low temperature and their photoluminescence characteristics

Preparation of Zn2SiO4:Mn2+ films by electrical discharge pulse method

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Synthesis of Mn-doped Zn₂SiO₄phosphor particles by solid-state method at relatively low temperature and their photoluminescence characteristics

Synthesis of Mn-doped Zn₂SiO₄phosphor particles by solid-state method at relatively low temperature and their photoluminescence characteristics

Preparation of Zn₂SiO₄:Mn²⁺ films by electrical discharge pulse method