2013 IEEE International Conference on Microwaves, Communications, Antennas and Electronic Systems (COMCAS 2013) 2013
DOI: 10.1109/comcas.2013.6685307
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Lumped element model for arbitrarily shaped integrated inductors — A statistical analysis

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Cited by 8 publications
(8 citation statements)
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“…The initial strategy to build the model was to create a surrogate model valid in the complete design space using the entire training set. The main objective was to develop two different models (one for predicting inductance and another for quality factor) that were valid for inductors with any given number of turns N, inner diameter D in and turn width w. The technology selected was a 0.35µm CMOS technology, for which the process information required for EM simulation was available, and the variables were allowed to vary in the following ranges: NÎ [1,8], D in Î[10, 300]µm, w Î [5,25]µm, under the constraint that D out <400µm. The spacing between turns s was kept fixed at the minimum value (s=2.5µm) as no performance improvement is obtained for larger values.…”
Section: Proposed Modeling Strategymentioning
confidence: 99%
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“…The initial strategy to build the model was to create a surrogate model valid in the complete design space using the entire training set. The main objective was to develop two different models (one for predicting inductance and another for quality factor) that were valid for inductors with any given number of turns N, inner diameter D in and turn width w. The technology selected was a 0.35µm CMOS technology, for which the process information required for EM simulation was available, and the variables were allowed to vary in the following ranges: NÎ [1,8], D in Î[10, 300]µm, w Î [5,25]µm, under the constraint that D out <400µm. The spacing between turns s was kept fixed at the minimum value (s=2.5µm) as no performance improvement is obtained for larger values.…”
Section: Proposed Modeling Strategymentioning
confidence: 99%
“…In order to reduce the computational effort in the RF design process, designers have developed physical/analytical equivalent models [5]- [7]. However, these models fail to accurately model the complete useful region of the inductor design space.…”
Section: Introductionmentioning
confidence: 99%
“…A detailed explanation on how to evaluate L s may is presented in [10]. For the remaining elements analytical expressions may be obtained in [11].…”
Section: Integrated Inductor Modelmentioning
confidence: 99%
“…Also, with a wider metal, the parasitic capacitances and fringing capacitances tend to increase and again, induce higher errors. Since this model is to be integrated into an optimization based design tool, the validity of the model along the overall design space was performed through a statistical analysis [11].…”
Section: Integrated Inductor Modelmentioning
confidence: 99%
“…From it is known that at frequencies below the first meander's SRF the meander's equivalent circuit is a parallel resonant circuit [9] (see Fig. 5).…”
Section: The Inductors Geometric Configurationmentioning
confidence: 99%