2013
DOI: 10.1109/ted.2013.2281237
|View full text |Cite
|
Sign up to set email alerts
|

Lumped Models for Assessment and Optimization of Bipolar Device RF Noise Performance

Abstract: We present a method for simulation of RF noise characteristics of both intrinsic and complete Si(Ge) heterojunction bipolar transistors (HBT's), aiming at support for device design and optimization. RF noise at the intrinsic device level is addressed through an equivalent circuit based on a discretization of partial differential equations describing the transport of minority carriers in quasi-neutral regions. Effects of nonuniform impurity/bandgap distribution and finite velocity recombination at the polysilic… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...

Citation Types

0
0
0

Publication Types

Select...

Relationship

0
0

Authors

Journals

citations
Cited by 0 publications
references
References 40 publications
0
0
0
Order By: Relevance

No citations

Set email alert for when this publication receives citations?