LWIR HgCdTe barrier photodiode with Auger-suppression

Kopytko, M.; Kębłowski, A.; Gawron, W.; Pusz, Wioletta

doi:10.1088/0268-1242/31/3/035025

Cited by 28 publications

(10 citation statements)

References 17 publications

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“…Devices exhibit subnanosecond time constants when operating under high reverse bias. 25,26 However, the time constant of unbiased photodiodes is still at the level of several nanoseconds. At zero bias, electron-hole pairs are generated in the diffusion layer, which is practically free of electric field.…”

Section: Device Optimizationmentioning

confidence: 99%

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Optimization of a HOT LWIR HgCdTe Photodiode for Fast Response and High Detectivity in Zero-Bias Operation Mode

Kopytko

Kębłowski

Madejczyk

et al. 2017

Journal of Elec Materi

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Fast response is an important property of infrared detectors for many applications. Currently, high-temperature long-wavelength infrared HgCdTe heterostructure photodiodes exhibit subnanosecond time constants while operating under reverse bias. However, nonequilibrium devices exhibit excessive low-frequency 1/f noise that extends up to MHz range, representing a severe obstacle to their widespread application. Present efforts are focused on zero-bias operation of photodiodes. Unfortunately, the time constant of unbiased photodiodes is still at the level of several nanoseconds. We present herein a theoretical investigation of device design for improved response time and detectivity of long-wavelength infrared HgCdTe photodiodes operating at 230 K in zero-bias mode. The calculation results show that highly doped p-type HgCdTe is the absorber material of choice for fast photodiodes due to its high electron diffusion coefficient. The detectivity of such a device can also be optimized by using absorber doping of N A = 1 9 10 17 cm À3 . Reduction of the thickness is yet another approach to improve the device response. Time constant below 1 ns is achieved for an unbiased photodiode with absorber thickness below 4 lm. A tradeoff between the contradictory requirements of achieving high detectivity and fast response time is expected in an optically immersed photodiode with very small active area.

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Section: Device Optimizationmentioning

confidence: 99%

“…25,26 However, the time constant of unbiased photodiodes is still at the level of several nanoseconds. Achieving unbiased devices with fast response time requires a different detector design.…”

Section: Introductionmentioning

confidence: 99%

Optimization of a HOT LWIR HgCdTe Photodiode for Fast Response and High Detectivity in Zero-Bias Operation Mode

Kopytko

Kębłowski

Madejczyk

et al. 2017

Journal of Elec Materi

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“…Significant improvements have been obtained by the reduction of the absorber volume using optical immersion, double or multiple pass of IR radiation, 2 suppression of Auger thermal generation in non-equlibrium devices, 4 magnetoconcentration effect detectors, 5 and recent barrier detectors. 6 The non-equilibrium devices require significant bias currents and exhibit excessive low frequency noise that extends up to MHz range. The noise, which reduces the detectivity, as well as the high current requirements, limits widespread applications.…”

Section: Introductionmentioning

confidence: 99%

Higher Operating Temperature IR Detectors of the MOCVD Grown HgCdTe Heterostructures

Madejczyk

Gawron

Kębłowski

et al. 2020

Journal of Elec Materi

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This paper summarizes progress in metal organic chemical vapour deposition (MOCVD) technology achieved in recent years at the Institute of Applied Physics, Military University of Technology and VIGO System S.A. MOCVD with a wide range of composition and donor/acceptor doping and without post-growth annealing is a very convenient tool for the deposition of HgCdTe epilayers used for uncooled infrared detectors. Particular attention is focused on: surface morphology improvement, doping issues, diffusion processes during growth study, substrate issues, crystallographic orientation selection. In this respect, MOCVD technology improvement influencing IR detector parameters is shown. CdTe buffer layer deposition allows HgCdTe heterostructure growth on GaAs substrates. Theoretical modelling using APSYS platform supports designing and better understanding of the carrier transport mechanism in detector’s structures. Secondary ion mass spectrometry profiles allows to compare projected and obtained structures and revealed diffusion processes of the elements. A wide range of different types of infrared detectors operating at high operating temperature conditions has been constructed: photoresistors, non-equilibrium photodiodes, dual-band photodiodes, barrier and multiple detectors. The methodical research efforts contributed to the time constant reduction are important in many detector applications. Future challenges and prospects are also discussed.

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“…Hg 1−x Cd x Te is a strategic material for the development of high performance infrared detectors due to its excellent optical and electrical properties [1][2][3][4]. The bandgap of Hg 1−x Cd x Te can be tailored from −0.6 eV to 1.6 eV by varying its composition (x) and hence it can be tuned for use in all the important infrared bands [2].…”

Section: Introductionmentioning

confidence: 99%

Cyclic nanoindentation studies of HgCdTe epitaxial films

Sharma

Saxena

et al. 2020

Mater. Res. Express

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Hg 1−x Cd x Te (x∼0.29) epitaxial films have been subjected to cyclic nanoindentation using spherical indenter from tribological aspects related to the development of polishing process for preparing defect free surface. Different loading/unloading rates of 0.5, 1 and the 4 mNs −1 with a peak load of 10 mN were used for 10 nanoindentation cycles. An open jaw shape was observed in the load-displacement curve for loading/unloading rate of 0.5 mNs −1 , while hysteresis loops were observed for 1 and 4 mNs −1 loading/unloading rates. This phenomenon is explained in light of the regimes of elastic/ anelastic deformation and smooth plastic flow. Pop-in during first loading cycle was observed at loading/unloading rates of 1 and 4 mNs −1 , which was attributed to elasto-plastic transition. Multiple pop-in events of low extent were also found in the form of serrations in load-displacement curves for loading/unloading rates of 0.5 and 1 mNs −1 . Based on these observations, the maximum load and minimum loading rate during polishing process for this material has been suggested. The mechanical properties of these films, such as contact stiffness and hardness have been extracted for different loading/unloading rates. The effect of indenter geometry on deformation behaviour using Berkovich indenter is also reported.

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LWIR HgCdTe barrier photodiode with Auger-suppression

Cited by 28 publications

References 17 publications

Optimization of a HOT LWIR HgCdTe Photodiode for Fast Response and High Detectivity in Zero-Bias Operation Mode

Optimization of a HOT LWIR HgCdTe Photodiode for Fast Response and High Detectivity in Zero-Bias Operation Mode

Higher Operating Temperature IR Detectors of the MOCVD Grown HgCdTe Heterostructures

Cyclic nanoindentation studies of HgCdTe epitaxial films

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