LWIR MBE HgCdTe photovoltaic detectors grown on Si composite substrates

Wijewarnasuriya, P. S.; Brill, G.; Chen, Y. P.; Dhar, Nibir K.; Velicu, S.

doi:10.1117/12.541606

Cited by 3 publications

(1 citation statement)

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“…Research focused on silicon substrates looked to address cost concerns that could arise from typical MCT substrates (most commonly CdZnTe). Growth of MCT on silicon in the early part of the decade was performed exclusively by MBE, as the lattice mismatch between various MCT alloys and the silicon substrate can be as large as 19% [25,48–51]. Research was also performed to enable improved room temperature performance of MCT detectors.…”

Section: Bulk Detectorsmentioning

confidence: 99%

Progress in Infrared Photodetectors Since 2000

Downs

Vandervelde

2013

Sensors

230

110

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The first decade of the 21st-century has seen a rapid development in infrared photodetector technology. At the end of the last millennium there were two dominant IR systems, InSb- and HgCdTe-based detectors, which were well developed and available in commercial systems. While these two systems saw improvements over the last twelve years, their change has not nearly been as marked as that of the quantum-based detectors (i.e., QWIPs, QDIPs, DWELL-IPs, and SLS-based photodetectors). In this paper, we review the progress made in all of these systems over the last decade plus, compare the relative merits of the systems as they stand now, and discuss where some of the leading research groups in these fields are going to take these technologies in the years to come.

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Section: Bulk Detectorsmentioning

confidence: 99%

Progress in Infrared Photodetectors Since 2000

Downs

Vandervelde

2013

Sensors

230

110

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Molecular-beam epitaxy-grown HgCdTe infrared detector: Material physics, structure design, and device fabrication

Wang

et al. 2023

Sci. China Phys. Mech. Astron.

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Molecular Dynamics Simulation of MBE Growth of CdTe/ZnTe/Si

Zhang

Chatterjee

Grein

et al. 2010

Journal of Elec Materi

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We simulate in three dimensions molecular beam epitaxial (MBE) growth of CdTe/ZnTe/Si using classical molecular dynamics. Atomic interactions are simulated with Stillinger-Weber potentials, whose parameters are obtained by fitting to experimental data or density function theory-calculated distortion energies of the component crystals. The effects of substrate temperature and atomic species flux ratios on epilayer morphology are investigated. The agreement between simulations and experiments suggests that this model has reasonable ability to predict the microstructures of CdTe/ZnTe/Si grown by MBE.

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LWIR MBE HgCdTe photovoltaic detectors grown on Si composite substrates

Cited by 3 publications

References 0 publications

Progress in Infrared Photodetectors Since 2000

Progress in Infrared Photodetectors Since 2000

Molecular-beam epitaxy-grown HgCdTe infrared detector: Material physics, structure design, and device fabrication

Molecular Dynamics Simulation of MBE Growth of CdTe/ZnTe/Si

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