MACE nano-texture process applicable for both single- and multi-crystalline diamond-wire sawn Si solar cells

Chen, Kexun; Zha, Jiawei; Hu, Fenqin; Ye, Xiaoya; Zou, Shuai; Vähänissi, Ville; Pearce, Joshua M.; Savin, Hele; Su, Xiaodong

doi:10.1016/j.solmat.2018.10.015

Cited by 43 publications

(17 citation statements)

References 69 publications

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“…However, the MACE-texture currently remains non-optimized from the optics perspective, since the nanostructures are typically polished to enable better conformality, and hence, more efficient surface passivation using chemical vapour deposited (CVD) silicon nitride (SiNx) [4]- [6], which is widely used by the current PV industry. Due to polishing, reflectance of MACE-textured wafers remains as high as 15-30 % without anti-reflection (AR) coatings, and a thick SiNx film is required to reduce reflectance to ~8-10 % [5], [6]. Surface passivation of MACE-structures with lower, <5 % reflectance has been demonstrated with thermally-grown silicon dioxide (SiO2) [7], [8].…”

Section: Introductionmentioning

confidence: 99%

Effect of MACE Parameters on Electrical and Optical Properties of ALD Passivated Black Silicon

Chen

Pasanen

Vähänissi

et al. 2019

IEEE J. Photovoltaics

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Metal-assisted chemical etching (MACE) enables efficient texturing of diamond-wire sawn multicrystalline silicon (mc-Si) wafers. However, the excellent optics are often sacrificed by polishing the surface to achieve better surface passivation with chemical-vapor-deposited (CVD) silicon nitride (SiNx). In this work, we show that a polishing step is not required when CVD SiNx is replaced with atomic-layer-deposited (ALD) aluminum oxide (Al2O3). Indeed, while polishing increases reflectance, it has in general only very modest effect on surface recombination velocity of ALD-passivated b-Si. Furthermore, since ALD Al2O3 is compatible with various surface morphologies due to its excellent conformality, the MACE parameters can be more freely adjusted. First, the concentration of silver nitrate (AgNO3) in AgNO3/H2O solution that is used to deposit Ag nanoparticles is shown to affect the final b-Si morphology. Instead of needle-shaped b-Si produced by 5 mmol/L AgNO3 concentration, two orders of magnitude lower AgNO3 concentration produces porous structures, which are more challenging to passivate. Additionally, we demonstrate that a separate Ag nanoparticle removal step in nitric acid (HNO3) is not a prerequisite for high carrier lifetime. Instead, Ag nanoparticles present during polishing in a HF/HNO3/H2O solution affect the final b-Si morphology by accelerating the etching of Si. The results demonstrate that no trade-offs are necessary between optical and electrical properties of MACE b-Si when using ALD.

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Section: Introductionmentioning

confidence: 99%

Effect of MACE Parameters on Electrical and Optical Properties of ALD Passivated Black Silicon

Chen

Pasanen

Vähänissi

et al. 2019

IEEE J. Photovoltaics

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“…The input solar radiation spectrum is assumed to be AM1.5. Both of R and α have tables for their values with each wavelength [21][22][23].…”

Section: B the Optical Model For The Npn Structure Input Solar Radiamentioning

confidence: 99%

Physically Based Analytical Model of Heavily Doped Silicon Wafers Based Proposed Solar Cell Microstructure

et al. 2020

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In this paper, an analytical model of a proposed low-cost high efficiency NPN silicon-based solar cell structure is presented. The structure is based on using low cost heavily doped commercially available silicon wafers and proposed to be fabricated by the same steps as the conventional solar cells except an extra deep trench etch step. Moreover, the cell has been engineered to react to the UV spectrum, resulting in a greater conversion performance. The presented analytical model takes the electrical and optical characteristics into account. Thus, the influence of both physical and technological parameters on the structure performance could be easily examined. Consequently, the optimization of the structure performance becomes visible. To inspect the validity of the analytical model, a comparison of the main performance parameters resulting from the model results with TCAD simulations is carried out showing good agreement.

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“…However, the lithography technique is not suitable for mass production because of its expense, low production-capacity, and incompatibility. Recently, many research interests turn to the metal-assisted chemical etching (MACE) large-area inverted pyramids since the MACE technique is simple, low-cost, large-area, and compatible with the current production line [ 14 , 18 – 21 ]. For example, Jiang et al [ 7 ] have reported inverted-pyramids nanostructure prepared by the MACE process followed by a post nanostructure rebuilding solution treatment and the conversion efficiency of IPs based multi-crystalline silicon (mc-Si) solar cells in large size of 156 × 156 mm 2 wafers reached up to 18.62%.…”

Section: Introductionmentioning

confidence: 99%

High-Efficiency Silicon Inverted Pyramid-Based Passivated Emitter and Rear Cells

Gao¹,

Liu²,

Fan³

et al. 2020

Nanoscale Res Lett

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Surface texturing is one of the most important techniques for improving the performance of photovoltaic (PV) device. As an appealing front texture, inverted pyramid (IP) has attracted lots of research interests due to its superior antireflection effect and structural characteristics. In this paper, we prepare high-uniform silicon (Si) IPs structures on a commercial monocrystalline silicon wafer with a standard size of 156 × 156 mm 2 employing the metal-assisted chemical etching (MACE) and alkali anisotropic etching technique. Combining the front IPs textures with the rear surface passivation of Al 2 O 3 /SiN x , we fabricate a novel Si IP-based passivated emitter and rear cell (PERC). Benefiting from the optical superiority of the optimized IPs and the improvement of electrical performance of the device, we achieve a high efficiency of 21.4% of the Si IP-based PERC, which is comparable with the average efficiency of the commercial PERC solar cells. The optimizing morphology of IP textures is the key to the improvement of the short circuit current I sc from 9.51 A to 9.63 A; meanwhile, simultaneous stack SiO 2 /SiN x passivation for the Si IP-based n + emitter and stack Al 2 O 3 /SiN x passivation for rear surface guarantees a high opencircuit voltage V oc of 0.677 V. The achievement of this high-performance PV device demonstrates a competitive texturing technique and a promising prospect for the mass production of the Si IP-based PERC.

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MACE nano-texture process applicable for both single- and multi-crystalline diamond-wire sawn Si solar cells

Abstract: MACE nano-texture process applicable for both single-and multi-crystalline diamond-wire sawn Si solar cells .

Cited by 43 publications

References 69 publications

Effect of MACE Parameters on Electrical and Optical Properties of ALD Passivated Black Silicon

Effect of MACE Parameters on Electrical and Optical Properties of ALD Passivated Black Silicon

Physically Based Analytical Model of Heavily Doped Silicon Wafers Based Proposed Solar Cell Microstructure

High-Efficiency Silicon Inverted Pyramid-Based Passivated Emitter and Rear Cells

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