Conventional logic gates failed to process data at a high bit rate. Therefore, researchers began to study the design of these gates with optical technology, which is characterized by high bit rate data processing. The non-linear behavior is a drawback in semiconductor optical amplifier (SOA). This nonlinearity property of the SOA is used in this paper to implement the OR optical gates. Mach-Zander interferometer (MZI)-based structures are among the numerous of structures that are available to transform a modulation of phase into a modulation of intensity. These are widely used by electro-optic (EO), or thermo-optic (TO) impacts to create various applications like optical modulators, splitters, switches, etc. In this paper, the MZI is used as switches and the SOA is employed with cross-gain modulation (XGM) to implement the optical logic gate OR at a high bit rate of 250 Gbps. Several experimental results were performed on the proposed design of the OR gate until the optimum value of the injection current, which is 0.08 A, was obtained. This optimum value led to achieve the lowest BER, highest Quality factor, and lowest power consumption, which are 0, 60.7989, and 31.13×10-3, respectively. The experimental results of the proposed design outperformed those results obtained by other state-of-the-art designs.