Macroscopic Versus Microscopic Schottky Barrier Determination at (Au/Pt)/Ge(100): Interfacial Local Modulation

Abstract

Macroscopic current-voltage measurements and nanoscopic Ballistic Electron Emission Spectroscopy (BEES) have been used to probe the Schottky barrier height at metal/Ge(100) junctions for two metal electrodes (Au, Pt) and different metallization methods; specifically, thermal-vapour and laser-vapour deposition. Analysis of macroscopic current-voltage characteristics indicates that a Schottky barrier height of 0.61-0.63 eV controls rectification at room temperature. On the other hand, BEES measured at 80 K reveals the coexistence of two distinct barriers at the nanoscale, taking values in the ranges 0.61-0.64 eV and 0.70-0.74 eV for the cases studied. For each metal/semiconductor junction, the macroscopic measurement agrees well with the lower barrier found with BEES. Ab-initio modelling of BEES spectra ascribes the two barriers to two different atomic registries between the metals and the Ge(100) surface, a significant relevant insight for next-generation highly miniaturized Ge-based devices.

Structural evolution, photoelectron spectra and vibrational properties of anionic GdGen− (n = 5–18) nanoalloy clusters: a DFT insight

“…5,6 Moreover, germanium has different benets contrasted with silicon, like higher saturation velocity and lower electronic band gap, which can dispose of the issue of depleting current saturation in MOS-FETs, reduce the operation voltage for the equipment, and improve the performance of photodetector. [7][8][9] Germanium-based graphene directly realizes the integration of high-quality graphene and semiconductor substrates, which will promote the wide application of graphene in the semiconductor industry more quickly. 9,10 On the other hand, exploring the geometric mutations, electronic structures, photoelectron spectra and vibrational modes of nanoalloy clusters have considerable importance due to the fact that nanoalloy clusters play an incredibly essential role in the shi from molecular to condensed matter, with the ongoing progress and widespread application of nanotechnology.…”

Structural Evolution, Electronic Structures, and Vibrational Properties of Anionic LuGen (n = 5–17) Clusters: From Lu-Linked to Lu-Encapsulated Configurations

“…In the past decades, germanium-based materials have attracted a lot of attention owing to properties like excellent electron and hole mobility of germanium that make them more suitable for semiconductor apparatuses and optoelectronic devices than silicon-based materials under the conditions of operating at high-speed and low power prerequisites. − For instance, as a substitute for silicon, the germanium channel materials used in the MOS-FETs (metal-oxide-semiconductor field-effect transistors) have been presented. − In addition, germanium has other advantages compared to silicon, such as a lower electronic band gap and higher saturation velocity, which can reduce the operating voltage for the device and eliminate the problem of drain current saturation in MOS-FETs. , On the other hand, studies on the structural evolutions, electronic structures, and spectral properties of clusters have become more important with the rapid development and wide application of nanotechnology since clusters play a crucial role in the transition from the molecular to the condensed phase.…”

“…4−6 In addition, germanium has other advantages compared to silicon, such as a lower electronic band gap and higher saturation velocity, which can reduce the operating voltage for the device and eliminate the problem of drain current saturation in MOS-FETs. 7,8 On the other hand, studies on the structural evolutions, electronic structures, and spectral properties of clusters have become more important with the rapid development and wide application of nanotechnology since clusters play a crucial role in the transition from the molecular to the condensed phase.…”