Magnetic and electrical behavior of Al doped La0.7Ca0.3MnO3 manganites

Tiwari, Shivani; Phase, D. M.; Choudhary, R. J.; Mund, H. S.; Ahuja, B.L.

doi:10.1063/1.3544475

Cited by 18 publications

(10 citation statements)

References 18 publications

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“…A shift in MST temperature is observed toward the higher values with the increase in Pb concentration except for 10% doped sample, in which the value of MST reduces to 142 K as compared to 162 K for 5% doped sample. The estimated MST temperature is well agreed with earlier reports on doped manganites 40,41 . It is manifested from the plots that as temperature rises, the overall resistivity of the doped samples increases up to MST which may be due to double‐exchange interactions between Mn 3+ –O 2− –Mn 4+ in lanthanum manganites.…”

Section: Resultssupporting

confidence: 89%

Polaron hopping conduction mechanism and magnetic properties of Pb‐doped LaMnO₃

et al. 2021

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For the last several years, ABO 3 -type perovskites (A is either a rare earth metal or an alkaline earth metal cation and B is a 3d transition metal cation) have fascinated global concern owing to their strong association among spin, charge, lattice, and orbital degrees of freedom and remarkable assets such as electrical, mechanical, optical, magnetic, catalytic, ferroelectric, colossal magnetoresistance (CMR), high T c superconductivity, non-volatile memory phenomena, etc. [1][2][3] In this class, manganites are materials with great technological value in several device applications, including CMR. 2 One of the key features of manganites as compared to other oxides families is the broad range of

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Section: Resultssupporting

confidence: 89%

Polaron hopping conduction mechanism and magnetic properties of Pb‐doped LaMnO₃

et al. 2021

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“…Hence, local islands with (weak) ferromagnetic interactions may appear in the material. Similar behavior has previously been observed for alkaline-earth-substituted manganites like La 0.7 Ca 0.3 MnO 3 . We furthermore note a changeover from negative to positive magnetoresistance for x > 0.50.…”

Section: Discussionsupporting

confidence: 88%

“…Both 55 We furthermore note a changeover from negative to positive magnetoresistance for x > 0.50. The enhanced (positive) MR effect at higher Al 3+ contents correlates with an increase in the (short-range) ferromagnetic component seen in the M(H) data at low temperatures, and furthermore with the lowered average oxidation of Ni caused by Al 3+ substitution.…”

Section: Discussionmentioning

confidence: 74%

Effect of Electron Doping on the Crystal Structure and Physical Properties of an n = 3 Ruddlesden–Popper Compound La₄Ni₃O₁₀

Periyasamy

Patra

Fjellvåg

et al. 2021

ACS Appl. Electron. Mater.

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The physical properties of La 4 Ni 3 O 10 with a two-dimensional (2D)-like Ruddlesden− Popper-type crystal structure are extraordinarily dependent on temperature and chemical substitution. By introducing Al 3+ atoms randomly at Ni sites, the average oxidation state for the two nonequivalent Ni cations is tuned and adopts values below the average of +2.67 in La 4 Ni 3 O 10 . La 4 Ni 3−x Al x O 10 is a solid solution for 0.00 ≤ x ≤ 1.00 and is prepared by the citric acid method, with attention paid to compositional control and homogeneity at low Al level (x) concentrations. The samples adopt a slightly distorted monoclinic structure [P2 1 /a (Z = 4)], evidenced by peak broadening of the (117) reflection. We report a remarkable effect on the electronic properties induced by tiny amounts of homogeneously distributed Al cations, with clear correspondence between resistivity, magnetization, diffraction, and density functional theory (DFT) data. DFT shows that electronically, there is no significant difference between the nonequivalent Ni atoms and no tendency toward any Ni 3+ /Ni 2+ charge ordering. The resistivity changes from metallic to semiconducting/insulating with increasing band gap at higher Al levels, consistent with results from DFT. The metal-to-metal (M-T-M) transition reported for La 4 Ni 3 O 10 , which is often interpreted as a charge density wave, is maintained until x = 0.15 Al level. However, the temperature characteristics of the resistivity change already at very low Al levels (x ≤ 0.03). A coupling of the M-T-M transition to the lattice is evidenced by an anomaly in the unit cell dimensions. Moreover, there is an excellent correlation between the resistivity and magnetization data shown by the metallic and Pauli paramagnetic regime for La 4 Ni 3−x Al x O 10 with x < 0.25. The introduction of the fixed +3 oxidation state of Al atoms randomly at the Ni sites reduces the overall oxidation state of Ni 2.67+ by keeping the oxygen stoichiometry unchanged. In addition, the nonmagnetic Al 3+ for Ni is likely to block Ni−O−Ni exchange pathways through −Ni− O−Al−O−Ni− fragments into the network of corner-shared octahedra with the emergence of possible short-range ferromagnetic ordering of the ferromagnetic domains/clusters that are formed due to Al substitutional disorder in a paramagnetic insulating matrix.

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“…A significant increase in the MR% is observed for all the samples as compared to their respective bulk counterparts. 13,14 Particularly for the Al doped samples; the MR% values become very high reaches up to as large as 100%. The enhancement in MR% for Al doped samples could possibly be due to modified Mn 3þ -O 2À -Mn 4þ double exchange network or Mn 3þ -O 2À -Mn 3þ superexchange network.…”

Section: Resultsmentioning

confidence: 96%

“…In this compound, through a suitable doping, one can alter the Mn 3þ and Mn 4þ ratio as well as can play with the chemical strain in this compound. [12][13][14][15][16] To vary the Mn 3þ and Mn 4þ ratio, we have chosen Al as a dopant since Al 3þ is a non-magnetic ion and would not create any extra magnetic interaction with Mn ions as it does not have any d electron. Also, among many available non-magnetic ion dopants, Al is preferred because Al 3þ ionic radius is closer to Mn 4þ .…”

mentioning

confidence: 99%