Magnetic and microstructural properties of sputter deposited Cr-doped aluminum nitride thin films on silicon substrates

Wistrela, E.; Bittner, A.; Schneider, Michael; Reissner, M.; Schmid, U.

doi:10.1063/1.4978748

Cited by 14 publications

(6 citation statements)

References 42 publications

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“…A representative plot of temperature variation of the real part of AC susceptibility normalized with its maximum value at each frequency are plotted in figure 5 for AlN thin film deposited at 400 o C. The peak height decreases and peaks shift towards higher temperatures with increase in the frequency of excitation field. This shift in peak temperature per decade change in frequency is quantified in the phenomenological parameter Ψ defined as Δ / Δ 10 . The parameter Ψ decreases with increase in the inter-particle interaction strength [32,33].…”

Section: Resultsmentioning

confidence: 99%

“…Aluminium nitride (AlN), an insulator having a wide direct band-gap ~ 6.1 eV, is a promising candidate in the field of dilute magnetic semiconductors (DMS) for spintronics applications [1][2][3][4][5][6][7][8]. Previously, doping of a few percent of magnetic transition metal (TM) atoms such as Cr, Mn, Fe, V and Ni has been utilized to produce AlN based DMSs [1,[9][10][11]. However, in the case of magnetic dopants, there is always an ambiguity about the origin of magnetic order in DMS.…”

Section: Introductionmentioning

confidence: 99%

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Defect induced magnetism and super spin glass state in reactive ion beam deposited nano-structured AlN thin films

2017

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Defect induced magnetism is reported in undoped aluminium nitride thin films deposited using reactive ion beam sputtering of aluminium in nitrogen plasma. The films have been deposited on silicon substrate at different temperatures. Existence of the defects in the films have been verified using room temperature photo-luminescence measurements. Owing to nano crystalline nature of the films, supermagnetic ground states have been observed. A cross-over from super paramagnetic to super spin glass state has been observed as the grain density increases. Detailed magnetisation measurements along with AC susceptibility measurements have been used to determine the ground states in these AlN thin films.

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Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Defect induced magnetism and super spin glass state in reactive ion beam deposited nano-structured AlN thin films

2017

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“…Small magnetic moments can be caused by traces of magnetic impurities (Fe, Co and/or Ni) introduced into the sample during the sample handling or multilayer deposition. 71,72 For example, a small amount of Fe, Co or Ni is perhaps incorporated in the multilayer during ML deposition from the IBS sputter chamber walls and/or from the target holder and sample holder. In that case, it should have been expected that the ML with carbon spacer layers should also show a ferromagnetic contribution in the SQUID measurement.…”

Section: Extended Characterisation Of Spacer Layersmentioning

confidence: 99%

Lithium permeation within lithium niobate multilayers with ultrathin chromium, silicon and carbon spacer layers

Hüger

Dörrer

Yimnirun

et al. 2018

Phys. Chem. Chem. Phys.

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Li permeation through ultrathin Cr, Si and C layers and interfaces is of interest in the optimization of lithium ion batteries with respect to the control of Li flux. Twenty-one LiNbO3 layers (9 nm), which serve as solid state Li reservoirs, were sputter deposited in an alternating sequence of enriched 6Li or 7Li isotope fractions spaced with (8 nm) thin Cr, Si and C layers. The Li isotope contrast was used to measure Li permeation using depth profiling by secondary ion mass spectrometry and neutron reflectometry on a nanometer scale. Extremely low Li permeation for Cr and Si at room temperature exemplifies the effective blocking of Li movement at least for five years. However, Li permeation through C layers was found to be faster than through Cr and Si layers. With temperature, the Li permeation is enhanced through Cr as compared to that through Si layers. Furthermore, material characterisation shows amorphous LiNbO3, C and Si layers and polycrystalline Cr layers (with 80% elemental bcc chromium and 20% chromium-oxide situated at Cr/LiNbO3 interfaces). Annealing in air at 100 °C (373 K) does not oxidize the Cr layers any further. A stress of 12 GPa, which was measured in Cr spacer layers at room temperature, remains unchanged upon annealing. The origin of a weak ferromagnetic order measured at room temperature (300 K) was attributed to some traces of Cr and Si inside LiNbO3.

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“…In order to improve the densification process of the AlN ceramics usually, alkaline earth oxides and/or rear‐earth oxides are added as sintering promoters, 17 and recently from metal–organic precursors 18 . A number of elements, such as Si, Mg, Cr, and Ni, have been proposed as a dopant to AlN in order to improve certain electronic properties for various applications 19–26 …”

Section: Introductionmentioning

confidence: 99%

Novel boron‐rich aluminum nitride advanced ceramic materials

Zagorac

Fonović

et al. 2022

Int J Applied Ceramic Tech

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Aluminum nitride (AlN) and boron nitride (BN) are well‐known ceramic materials with numerous valuable properties, whereas recently there is a growing field of research on the AlN/BN advanced ceramic materials. Here, we present a study on boron‐rich AlN, structural and electronic properties, and structure–property relationship. Several AlxB1−xN solid solutions (x = 1, .875, .75, and .625) have been investigated, and structure optimization has been performed for four different structure types: h‐BN, wurtzite, sphalerite, and rock salt. First‐principles calculations were performed using hybrid B3LYP functional. New modifications and compounds have been predicted as a function of boron concentration in AlN, and especially, interesting phase transitions were found at extreme pressure conditions. Electronic properties and band structures were computed, and the possibility for bandgap tuning has been discovered. The present study, and especially the structure–property relationship, gives new possibilities for bandgap engineering in boron‐rich AlN electroceramic materials.

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Magnetic and microstructural properties of sputter deposited Cr-doped aluminum nitride thin films on silicon substrates

Cited by 14 publications

References 42 publications

Defect induced magnetism and super spin glass state in reactive ion beam deposited nano-structured AlN thin films

Defect induced magnetism and super spin glass state in reactive ion beam deposited nano-structured AlN thin films

Lithium permeation within lithium niobate multilayers with ultrathin chromium, silicon and carbon spacer layers

Novel boron‐rich aluminum nitride advanced ceramic materials

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