In
contrast to the corundum-type A2X3 structure,
which has only one crystallographic site available for trivalent cations
(e.g., in hematite), the closely related ABX3 ilmenite-type
structure comprises two different octahedrally coordinated positions
that are usually filled with differently charged ions (e.g., in Fe2+Ti4+O3 ilmenite). Here, we report a
synthesis of the first binary ilmenite-type compound fabricated from
a simple transition-metal oxide (Mn2O3) at high-pressure
high-temperature (HP-HT) conditions. We experimentally established
that, at normal conditions, the ilmenite-type Mn2+Mn4+O3 (ε-Mn2O3) is an
n-type semiconductor with an indirect narrow band gap of E
g = 0.55 eV. Comparative investigations of the electronic
properties of ε-Mn2O3 and previously discovered
quadruple perovskite ζ-Mn2O3 phase
were performed using X-ray absorption near edge spectroscopy. Magnetic
susceptibility measurements reveal an antiferromagnetic ordering in
ε-Mn2O3 below 210 K. The synthesis of
ε-Mn2O3 indicates that HP-HT conditions
can induce a charge disproportionation in simple transition-metal
oxides A2O3, and potentially various mixed-valence
polymorphs of these oxides, for example, with ilmenite-type, LiNbO3-type, perovskite-type, and other structures, could be stabilized
at HP-HT conditions.