Magnetic and structural properties of stoichiometric thin Fe3Si/GaAs(0 0 1) films

Structural and magnetic properties of an InGaAs/Fe3Si superlattice in cylindrical geometry

“…The obtained magnetization curves at room temperature have been normalized to the magnetic saturation moment m s (planar film 8.6 × 10 −5 emu, tubes 6.7 × 10 −5 emu) and are plotted in figures 4(a) and (b), respectively (note the different axes for the in-plane and out-of-plane measurements). The planar Fe 3 Si film exhibits in-plane cubic anisotropy with the easy axis along the 100 direction, in agreement with other reports [22][23][24]. In contrast to the planar film, the in-plane magnetization curves measured for rolled-up tubes are nonequivalent and no longer exhibit rectangular loops, but instead show smoother behavior, which indicates a harder switching.…”

Epitaxial Fe3Si films on GaAs(100) substrates by means of electron beam evaporation

“…Values of the room temperature saturation magnetization M s (about 700 emu cm −3 ) for our films studied are very close to those reported by Ionescu et al [24] (741 emu cm −3 ) for epitaxial Fe 3 Si grown also on (001) GaAs substrates and higher as compared to the reported value for Fe 3 Si films grown on GaAs(113) [25]. The measured magnetic moment for our film thickness (50 nm) is found to be close to the bulk value of 1.175 μ B /atom (967 emu cm −3 ) at 6.5 K [38].…”

“…However, experimental data of spin polarization are not yet known. The majority of groups have studied Fe 3 Si films grown on GaAs substrates [17][18][19][20][21][22][23][24][25][26] mainly using the extensive MBE technique qualified for III/V growth processes. Recently, Fe 3 Si films have also been prepared by magnetron sputtering [27,28].…”

Structural characterization by electronic transport properties on Fe3Si films

“…The lattice parameter of Fe 3 Si is 0.564 nm, which almost matches that of GaAs and Si [6,7]. In fact, the epitaxial growth of Fe 3 Si on GaAs(0 0 1) is realized [6,7]. On the other hand, the growth of Fe 3 Si on Si is difficult, since there is interfacial diffusion of Si atoms from the substrate and consequently β-FeSi 2 grows at the interface [8,9].…”

“…A theoretical work predicts that Fe 3 Si is a half-metal [4], though several works are negative in that [5]. The lattice parameter of Fe 3 Si is 0.564 nm, which almost matches that of GaAs and Si [6,7]. In fact, the epitaxial growth of Fe 3 Si on GaAs(0 0 1) is realized [6,7].…”