Magnetic and structural properties of Mn-doped Bi2Se3 topological insulators

Tarasenko, R.; Vališka, Michal; Vondráček, Martin; Horáková, Kateřina; Tkáč, V.; Carva, Karel; Baláž, Pavel; Holý, V.; Springholz, G.; Sechovský, V.; Honolka, Jan

doi:10.1016/j.physb.2015.11.022

Cited by 18 publications

(19 citation statements)

References 44 publications

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“…This layer could be induced either by the proposed magnetic proximity effect, or by the migration of enough Mn from the AFM layer into the TI layer. The latter would result in a magnetically doped TI, Mn δ (Bi,Sb) 2− δ Te 3 , where the observed 20 K onset temperature of the GHE would require that δ is significantly in excess of 0.15 in order to achieve the necessary Curie temperature 29 , 30 . Such doping-induced ferromagnetism would be accompanied by an increase in the Mn valence from 2+ toward 3+ and a significant enhancement of the X-ray magnetic circular dichroism (XMCD) magnitude 31 , 32 .…”

Section: Resultsmentioning

confidence: 99%

Exchange-biasing topological charges by antiferromagnetism

Yin

Grutter

et al. 2018

Nat Commun

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Geometric Hall effect is induced by the emergent gauge field experienced by the carriers adiabatically passing through certain real-space topological spin textures, which is a probe to non-trivial spin textures, such as magnetic skyrmions. We report experimental indications of spin-texture topological charges induced in heterostructures of a topological insulator (Bi,Sb)2Te3 coupled to an antiferromagnet MnTe. Through a seeding effect, the pinned spins at the interface leads to a tunable modification of the averaged real-space topological charge. This effect experimentally manifests as a modification of the field-dependent geometric Hall effect when the system is field-cooled along different directions. This heterostructure represents a platform for manipulating magnetic topological transitions using antiferromagnetic order.

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Section: Resultsmentioning

confidence: 99%

Exchange-biasing topological charges by antiferromagnetism

Yin

Grutter

et al. 2018

Nat Commun

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“…Motivated to study the physics of magnetically doped TIs, numerous studies have been published on the physics of materials produced by molecular beam epitaxy (MBE) grown with fluxes of elemental Bi, Se, and Mn [27][28][29][30]. This growth procedure is expected to produce a dilute magnetic alloy of Bi 2 Se 3 , with Mn entering the system at Bi-substitutional sites randomly throughout the thin film, with Mn concentration determined by the relative arrival rate of Mn ions to Bi and Se ions during growth.…”

Section: Introductionmentioning

confidence: 99%

Molecular beam epitaxy growth and structure of self-assembled Bi₂Se₃/Bi₂MnSe₄ multilayer heterostructures

Hagmann

Chowdhury

et al. 2017

New J. Phys.

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We demonstrate that the introduction of an elemental beam of Mn during the molecular beam epitaxial growth of Bi 2 Se 3 results in the formation of layers of Bi 2 MnSe 4 that intersperse between layers of pure Bi 2 Se 3 . This study revises the assumption held by many who study magnetic topological insulators (TIs) that Mn incorporates randomly at Bi-substitutional sites during epitaxial growth of Mn:Bi 2 Se 3 . Here, we report the formation of thin film magnetic TI Bi 2 MnSe 4 with stoichiometric composition that grows in a self-assembled multilayer heterostructure with layers of Bi 2 Se 3 , where the number of Bi 2 Se 3 layers separating the single Bi 2 MnSe 4 layers is approximately defined by the relative arrival rate of Mn ions to Bi and Se ions during growth, and we present its compositional, structural, and electronic properties. We support a model for the epitaxial growth of Bi 2 MnSe 4 in a near-periodic self-assembled layered heterostructure with Bi 2 Se 3 with corresponding theoretical calculations of the energetics of this material and those of similar compositions. Computationally derived electronic structure of these heterostructures demonstrates the existence of topologically nontrivial surface states at sufficient thickness. New J. Phys. 19 (2017) 085002 J A Hagmann et al

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“…1 It has led to ferromagnets with low Curie temperatures below 20 K. [9][10][11][12] Theoretical calculations, 13 however, obtain a monotonic increase of the Curie temperature with increasing doping. Doping by transition metal impurities leads to formation of carriers, e.g., Mn-impurities in Bi 2 Te 3 which substitute Bi-atoms will act as acceptors.…”

Section: Introductionmentioning

confidence: 99%

“…[4][5][6][7][8] Their doping by low concentrations of transition metal elements, e.g., by Ti, V, Cr, Mn, or Fe, is a way to add novel functionality to topological insulators. 1 It has led to ferromagnets with low Curie temperatures below 20 K. [9][10][11][12] Theoretical calculations, 13 however, obtain a monotonic increase of the Curie temperature with increasing doping. Doping by transition metal impurities leads to formation of carriers, e.g., Mn-impurities in Bi 2 Te 3 which substitute Bi-atoms will act as acceptors.…”

Section: Introductionmentioning

confidence: 99%

Electronic and transport properties of the Mn-doped topological insulatorBi2Te3: A first-principles study

et al. 2016

Self Cite

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We present a first-principles study of the electronic, magnetic, and transport properties of the topological insulator Bi2Te3 doped with Mn atoms in substitutional (MnBi) and interstitial van der Waals gap positions (Mni), which act as acceptors and donors, respectively. The effect of native BiTe-and TeBi-antisite defects and their influence on calculated electronic transport properties is also investigated. We have studied four models representing typical cases, namely, (i) Bi2Te3 with and without native defects, (ii) MnBi defects with and without native defects, (iii) the same, but for Mni defects, and (iv) the combined presence of MnBi and Mni. It has been found that lattice relaxations around MnBi defects play an important role for both magnetic and transport properties.The resistivity is strongly influenced by the amount of carriers, their type, and by the relative positions of the Mn-impurity energy levels and the Fermi energy. Our results suggest strategies to tune bulk resistivities, and also clarify the location of Mn atoms in samples. Calculations indicate that at least two of the considered defects have to be present simultaneously in order to explain the experimental observations, and the role of interstitials may be more important than expected.

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Magnetic and structural properties of Mn-doped Bi2Se3 topological insulators

Cited by 18 publications

References 44 publications

Exchange-biasing topological charges by antiferromagnetism

Exchange-biasing topological charges by antiferromagnetism

Molecular beam epitaxy growth and structure of self-assembled Bi₂Se₃/Bi₂MnSe₄ multilayer heterostructures

Electronic and transport properties of the Mn-doped topological insulatorBi2Te3: A first-principles study

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Magnetic and structural properties of Mn-doped Bi2Se3 topological insulators

Cited by 18 publications

References 44 publications

Exchange-biasing topological charges by antiferromagnetism

Exchange-biasing topological charges by antiferromagnetism

Molecular beam epitaxy growth and structure of self-assembled Bi2Se3/Bi2MnSe4 multilayer heterostructures

Electronic and transport properties of the Mn-doped topological insulatorBi2Te3: A first-principles study

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Molecular beam epitaxy growth and structure of self-assembled Bi₂Se₃/Bi₂MnSe₄ multilayer heterostructures