Magnetic anisotropy basis sets for epitaxial (110) and (111) REFe₂nanofilms

Abstract

Magnetic anisotropy basis sets for the cubic Laves phase rare earth intermetallic REFe2 compounds are discussed in some detail. Such compounds can be either free standing, or thin films grown in either (110) or (111) mode using molecular beam epitaxy. For the latter, it is useful to rotate to a new coordinate system where the z-axis coincides with the growth axes of the film. In this paper, three symmetry adapted basis sets are given, for multi-pole moments up to n = 12. These sets can be used for free-standing compounds and for (110) and (111) epitaxial films. In addition, the distortion of REFe2 films, grown on sapphire substrates, is also considered. The distortions are different for the (110) and (111) films. Strain-induced harmonic sets are given for both specific and general distortions. Finally, some predictions are made concerning the preferred direction of easy magnetization in (111) molecular beam epitaxy grown REFe2 films.

Magnetic anisotropy of epitaxial (Ga,Mn)As on(113)AGaAs

“…The corresponding anisotropy is of the form K xy w x w y (as in Ref. 40), hence it is a difference of uniaxial anisotropies on the [110] and [110] directions, and the anisotropy field is H u = 2K xy /(µ 0 M ) (this is the field required to align magnetization along the hard axis, e.g. [110]; only H u /2 is required to align magnetization along the z direction).…”