Magnetic circular dichroism of a vanadium impurity in 6H-silicon carbide

Reinke, J.; Weihrich, H.; Greulich‐Weber, S.; Spaeth, J.‐M.

doi:10.1088/0268-1242/8/10/013

Cited by 26 publications

(10 citation statements)

References 8 publications

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“…Recent studies using chromium, molybdenum, and vanadium in silicon carbide (SiC) have shown that they may be equally relevant for quantum applications, combining both brightness and (near-)telecom emission in a technologically mature material (14)(15)(16). Among these ions, vanadium V 4+ is the only fully telecom transition metal emitter, covering the entire O-band spectrum (1278 to 1388 nm), depending on its substitutional silicon site in the 4H and 6H polytypes of SiC (17)(18)(19). Although V has been studied for decades for compensating SiC crystals, critical questions remain regarding properties for quantum applications.…”

Section: Introductionmentioning

confidence: 99%

Vanadium spin qubits as telecom quantum emitters in silicon carbide

et al. 2020

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Solid-state quantum emitters with spin registers are promising platforms for quantum communication, yet few emit in the narrow telecom band necessary for low-loss fiber networks. Here, we create and isolate near-surface single vanadium dopants in silicon carbide (SiC) with stable and narrow emission in the O band, with brightness allowing cavity-free detection in a wafer-scale material. In vanadium ensembles, we characterize the complex d1 orbital physics in all five available sites in 4H-SiC and 6H-SiC. The optical transitions are sensitive to mass shifts from local silicon and carbon isotopes, enabling optically resolved nuclear spin registers. Optically detected magnetic resonance in the ground and excited orbital states reveals a variety of hyperfine interactions with the vanadium nuclear spin and clock transitions for quantum memories. Last, we demonstrate coherent quantum control of the spin state. These results provide a path for telecom emitters in the solid state for quantum applications.

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Section: Introductionmentioning

confidence: 99%

Vanadium spin qubits as telecom quantum emitters in silicon carbide

et al. 2020

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“…Recently, highly anisotropic interaction with magnetic field governed by the corresponding g-tensors has been observed or tentatively proposed for these KD systems [6,7], however the underlying physics has not been understood so far. Here we note that, although parallel component (g ) of g-tensor was thoroughly studied for V in 6H SiC by invoking crystal field theory, the emerging strong electron-phonon coupling is not included [2,[8][9][10][11] or considered as minor effect [1]. The strong anisotropy in g-tensor can be described by an effective Hamiltonian and pseudospins in which parameters cannot be predicted by applying simple models, and rather fitting procedure to known experimental data was applied.…”

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confidence: 99%

{\textit{Ab initio} determination of pseudospin for paramagnetic defects in SiC

Csóré,

Gali

2019

Preprint

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Paramagnetic point defects in solids may exhibit a rich set of interesting and not yet fully resolved physics. In particular, character of wavefunctions and electron-phonon coupling in these defects may highly influence their interaction with external magnetic fields. Complex interplay between the electronic orbitals, phonons and electron spin determines the effective pseudospin of the system that we demonstrate on vanadium and molybdenum defects in hexagonal silicon carbide (SiC) by means of ab initio calculations. In this Letter, we find a giant anisotropy in the g-tensor of these defects with Kramers doublet spin ground state, resulting in reduced and vanishing interaction with the magnetic field in parallel and transverse directions, respectively. The consequences of our finding in the application of these defects for quantum information processing are briefly discussed.

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“…splitting [16]. At the hexagonal sites in SiC the rotational symmetry of the potential of the donor is perturbed the most, probably by a crystal field [17]. The more intense the E-type admixture into the 1s(A 1 ) ground state, the more does the A 1 state approach the E state within the band gap.…”

Section: Resultsmentioning

confidence: 99%

The Microscopic and Electronic Structure of Shallow Donors in SiC

Greulich‐Weber

1998

phys. stat. sol. (b)

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Nitrogen donors in 6H-, 4H-and 3C-SiC were investigated using conventional electron paramagnetic resonance (EPR) and electron nuclear double resonance (ENDOR) and the experimental results are discussed. An attempt is presented to interpret the experimentally found large differences in hyperfine interactions of the 14 N nuclei on the various inequivalent sites in the different polytypes of SiC in terms of valley±orbit splitting and ªcentral-cell correctionsº in the framework of the effective mass theory (EMT). Phosphorus doping by neutron transmutation in 6H-SiC resulted in various phosphorus-related EPR spectra previously associated with shallow phosphorous donors and phosphorus±vacancy complexes. In analogy to the new interpretation of the nitrogen donor spectra in various polytypes, it is proposed that all phosphorus-related spectra found hitherto in 6H-SiC are due to isolated phosphorus donors in ground and excited EMT states.Introduction. Silicon carbide has recently received considerable attention because of its applications for high temperature electronics, as a wide band gap material for optoelectronics and as a substrate for the epitaxial growth of nitrides such as GaN for blue LEDs and blue lasers. For the applications of SiC it is essential to control and understand the shallow donors and acceptors. The most prominent shallow donor is nitrogen, which is inadvertently incorporated into Lely-grown SiC. It was identified first by electron paramagnetic resonance (EPR) on the two quasi-cubic and the hexagonal sites in 6H-SiC [1] and meanwhile investigated in detail with infrared (IR) absorption spectroscopy [2,3]. There is very little knowledge about other donors. In our samples phosphorus, another very promising donor, was introduced by neutron transmutation into 6H-SiC. Until now EPR spectra of two different P-related defects were observed [4,5]. However, only one of the two defects can be due to the isolated P donor. Apart from these more practical questions, there is a fundamental aspect making the investigation of shallow donors particularly interesting and challenging in SiC: The same ªchemicalº impurity is incorporated in various inequivalent sites in different sublattices (Si or C) and in different SiC polytypes, a situation which is not paralleled in other semiconductors such as silicon or the III±V compounds. The inequivalent sites differ in their environment of lattice neighbours. The polytypes differ by the stacking sequence of Si and C double layers. As one of the consequences, the crystal fields experienced by a donor will be different depending on the site within the polytype. In 3C there is only one site having cubic symmetry, while in 4H-SiC there are two inequivalent sites, one having quasi-cubic symmetry (k) and a second with hexagonal symmetry (h). In 6H-SiC there are three inequivalent sites, one with hexagonal (h) and two with quasi-cubic (k 1 , k 2 )

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Magnetic circular dichroism of a vanadium impurity in 6H-silicon carbide

Cited by 26 publications

References 8 publications

Vanadium spin qubits as telecom quantum emitters in silicon carbide

Vanadium spin qubits as telecom quantum emitters in silicon carbide

{\textit{Ab initio} determination of pseudospin for paramagnetic defects in SiC

The Microscopic and Electronic Structure of Shallow Donors in SiC

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