Magnetic damping in ferromagnetic/heavy-metal systems: The role of interfaces and the relation to proximity-induced magnetism

Swindells, C.; Głowiński, Hubert; Choi, Y.; Haskel, D.; Michałowski, Paweł Piotr; Hase, Thomas P. A.; Stobiecki, F.; Kuświk, Piotr; Atkinson, D.

doi:10.1103/physrevb.105.094433

Cited by 7 publications

(5 citation statements)

References 70 publications

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“…β = 2 represents the AHE resulting from the intrinsic mechanism related to Berry's phase which is only affected by the electronic band structure of the material. Therefore, the obtained result of β = 1.8 seems to support the intrinsic picture that the negative AHE component might be the proximity-induced ferromagnetic layer inside BSTS which has a nonzero Berry's phase [9,[44][45][46][47].…”

Section: Analyses Based On the Two-channel Ahe Modelsupporting

confidence: 68%

Investigation of the mechanism of the anomalous Hall effects in Cr2Te3/(BiSb)2(TeSe)3 heterostructure

Cho

Lee

et al. 2023

Nano Convergence

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The interplay between ferromagnetism and the non-trivial topology has unveiled intriguing phases in the transport of charges and spins. For example, it is consistently observed the so-called topological Hall effect (THE) featuring a hump structure in the curve of the Hall resistance (Rxy) vs. a magnetic field (H) of a heterostructure consisting of a ferromagnet (FM) and a topological insulator (TI). The origin of the hump structure is still controversial between the topological Hall effect model and the multi-component anomalous Hall effect (AHE) model. In this work, we have investigated a heterostructure consisting of BixSb2−xTeySe3−y (BSTS) and Cr2Te3 (CT), which are well-known TI and two-dimensional FM, respectively. By using the so-called “minor-loop measurement”, we have found that the hump structure observed in the CT/BSTS is more likely to originate from two AHE channels. Moreover, by analyzing the scaling behavior of each amplitude of two AHE with the longitudinal resistivities of CT and BSTS, we have found that one AHE is attributed to the extrinsic contribution of CT while the other is due to the intrinsic contribution of BSTS. It implies that the proximity-induced ferromagnetic layer inside BSTS serves as a source of the intrinsic AHE, resulting in the hump structure explained by the two AHE model. Graphical abstract

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Section: Analyses Based On the Two-channel Ahe Modelsupporting

confidence: 68%

Investigation of the mechanism of the anomalous Hall effects in Cr2Te3/(BiSb)2(TeSe)3 heterostructure

Cho

Lee

et al. 2023

Nano Convergence

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“…We further focused on manipulating η rather than α because the lowering α is limited by enhanced damping from spin pumping in thin film FM/HM bilayer structure. [ 34–37 ]…”

Section: Resultsmentioning

confidence: 99%

“…We further focused on manipulating η rather than α because the lowering α is limited by enhanced damping from spin pumping in thin film FM/HM bilayer structure. [34][35][36][37] We performed Fokker-Planck calculation with macrospin approximation [38][39][40][41][42][43] to support the TRNG availability of SOT devices, including FLT. The Fokker-Planck equation numerically predicts the switching probability (P sw ) of SOT switching, and we demonstrated the calculation details in Section S1, Supporting Information.…”

Section: Role Of the Flt Acting On The Magnetization Switchingmentioning

confidence: 99%

Reduction of Operating Current by Harnessing the Field‐ and Damping‐Like Torque Ratios in Nonmagnet–Ferromagnet Heterojunctions

Lee,

Kim,

Yoon

et al. 2023

Small Science

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With the growing demand for high‐speed electronic devices with low energy consumption, spin–orbit torque (SOT) has become a significant focus. SOT can switch the magnetization direction in a material system with broken inversion symmetry, such as a normal metal (NM)/ferromagnet (FM) heterojunction. The SOT consists of two mutually orthogonal vector components along with the injected current direction: the transverse damping‐like torque (DLT) and the longitudinal field‐like torque (FLT). Numerous studies have mainly centered on the DLT for the SOT switching mechanism. However, DLT and FLT are essential to enhance SOT efficiency because FLT boosts the magnetization precession motion. Herein, heterojunctions consisting of NM 1 (Ta, W, or Pt)/NM 2 (Nb)/FM (CoFeB) are devised to manipulate the FLT‐to‐DLT ratio (η) through the change in Nb thickness. Furthermore, experimental confirmation exists for reducing threshold current as η increases. The SOT devices with substantial η generate random numbers. The National Institute of Standards and Technology Special Publication 800‐90B test verifies randomness and confirms that the SOT devices are beneficial sources for true random number generators (TRNGs). These findings indicate the crucial role of FLT in the SOT switching process and underscore its significance in developing SOT‐based TRNG devices.

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“…The relationship between Pt PIM and damping was further evidenced in a system with a Cu spacer layer in the structure CoFe/Cu(t)/Pt, which showed the largest damping is associated with the highest Pt PIM and the lowest damping with the loss of Pt PIM. 84…”

Section: Journal Of Applied Physicsmentioning

confidence: 99%

Interface enhanced precessional damping in spintronic multilayers: A perspective

Swindells

Atkinson

2022

Journal of Applied Physics

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In the past two decades, there have been huge developments in the understanding of damping in multilayered thin films and, more generally, in spin-transport in spintronic systems. In multilayered ferromagnetic (FM)/non-magnetic (NM) thin-film systems, observations of ferromagnetic resonant precession show a strong increase in the fundamental damping when the FM thin films are layered with heavy metals, such as Pt. These observations led to significant theoretical developments, dominated by the “spin-pumping” formalism, which describes the enhancement of damping in terms of the propagation or “pumping” of spin-current across the interface from the precessing magnetization into the heavy metal. This paper presents a perspective that introduces the key early experimental damping results in FM/NM systems and outlines the theoretical models developed to explain the enhanced damping observed in these systems. This is followed by a wider discussion of a range of experimental results in the context of the theoretical models, highlighting agreement between the theory and experiment, and more recent observations that have required further theoretical consideration, in particular, with respect to the role of the interfaces and proximity-induced magnetism in the heavy metal layer. The Perspective concludes with an outline discussion of spin-pumping in the broader context of spin-transport.

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Magnetic damping in ferromagnetic/heavy-metal systems: The role of interfaces and the relation to proximity-induced magnetism

Cited by 7 publications

References 70 publications

Investigation of the mechanism of the anomalous Hall effects in Cr2Te3/(BiSb)2(TeSe)3 heterostructure

Investigation of the mechanism of the anomalous Hall effects in Cr2Te3/(BiSb)2(TeSe)3 heterostructure

Reduction of Operating Current by Harnessing the Field‐ and Damping‐Like Torque Ratios in Nonmagnet–Ferromagnet Heterojunctions

Interface enhanced precessional damping in spintronic multilayers: A perspective

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