Magnetic domain-wall depinning with reduced current density by short pulse rise time

Langner, Hauke H.; Bocklage, Lars; Krüger, Benjamin; Matsuyama, T.; Meier, Guido

doi:10.1063/1.3518486

Cited by 9 publications

(9 citation statements)

References 13 publications

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“…3,[13][14][15][16] The model simulations presented here show for all of them that the temperature increase due to the Joule heating did not result in the temperature exceeding the Curie temperature.…”

Section: Discussionmentioning

confidence: 99%

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Joule heating in nanowires

et al. 2011

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We study the effect of Joule heating from electric currents flowing through ferromagnetic nanowires on the temperature of the nanowires and on the temperature of the substrate on which the nanowires are grown. The spatial current density distribution, the associated heat generation, and diffusion of heat is simulated within the nanowire and the substrate. We study several different nanowire and constriction geometries as well as different substrates: (thin) silicon nitride membranes, (thick) silicon wafers, and (thick) diamond wafers. The spatially resolved increase in temperature as a function of time is computed.For effectively three-dimensional substrates (where the substrate thickness greatly exceeds the nanowire length), we identify three different regimes of heat propagation through the substrate: regime (i), where the nanowire temperature increases approximately logarithmically as a function of time. In this regime, the nanowire temperature is well-described analytically by You et al.[ APL89, 222513 (2006)]. We provide an analytical expression for the time tc that marks the upper applicability limit of the You model. After tc, the heat flow enters regime (ii), where the nanowire temperature stays constant while a hemispherical heat front carries the heat away from the wire and into the substrate. As the heat front reaches the boundary of the substrate, regime (iii) is entered where the nanowire and substrate temperature start to increase rapidly.For effectively two-dimensional substrates (where the nanowire length greatly exceeds the substrate thickness), there is only one regime in which the temperature increases logarithmically with time for large times, before the heat front reaches the substrate boundary. We provide an analytical expression, valid for all pulse durations, that allows one to accurately compute this temperature increase in the nanowire on thin substrates.

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Section: Discussionmentioning

confidence: 99%

“…Section III C studies a nanowire with a notch-like constriction (triangular shape removed from the wire on one side only) that is placed on a silicon nitride substrate of 100 nm thickness (as in Ref. [13][14][15]. The same system is studied in Sec.…”

Section: -10mentioning

confidence: 99%

Joule heating in nanowires

et al. 2011

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“…For instance, it was found that adjusting the rise time of the applied pulse current will amplify the motion of a DW. 4,5 It has also been shown that when the applied current density is higher than a critical value, a transverse DW undergoes a chirality flipping, 6,7 the phenomenon is known as Walker breakdown. High data density design implies that the nanowires will be placed very close to each other.…”

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Current-induced coupled domain wall motions in a two-nanowire system

Purnama

Sekhar

Goolaup

et al. 2011

Applied Physics Letters

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In two closely spaced nanowires system, where domain walls exist in both of the nanowires, applying spin-polarized current to any of the nanowire will induce domain wall motions in the adjacent nanowire. The zero-current domain wall motion is accommodated by magnetostatic interaction between the domain walls. As the current density is increased, chirality flipping is observed in the adjacent nanowire where no current is applied. When current is applied to both nanowires, the coupled domain wall undergoes oscillatory motion. Coupling breaking is observed at a critical current density which varies in a non-linear manner with respect to the interwire spacing.

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“…Moreover, the DWs in in-plane materials are forced to rotate along the in-plane orientation, which is also known as the Néel configuration. DWs in in-plane materials have been shown to be able to move with a high speed under the application of current 4 5 . However, it has also been shown that the motions of DWs within in-plane materials are often not reproducible 6 .…”

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Coupled Néel domain wall motion in sandwiched perpendicular magnetic anisotropy nanowires

Purnama

Kerk

Lim

et al. 2015

Sci Rep

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The operating performance of a domain wall-based magnetic device relies on the controlled motion of the domain walls within the ferromagnetic nanowires. Here, we report on the dynamics of coupled Néel domain wall in perpendicular magnetic anisotropy (PMA) nanowires via micromagnetic simulations. The coupled Néel domain wall is obtained in a sandwich structure, where two PMA nanowires that are separated by an insulating layer are stacked vertically. Under the application of high current density, we found that the Walker breakdown phenomenon is suppressed in the sandwich structure. Consequently, the coupled Néel domain wall of the sandwich structure is able to move faster as compared to individual domain walls in a single PMA nanowire.

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Magnetic domain-wall depinning with reduced current density by short pulse rise time

Cited by 9 publications

References 13 publications

Joule heating in nanowires

Joule heating in nanowires

Current-induced coupled domain wall motions in a two-nanowire system

Coupled Néel domain wall motion in sandwiched perpendicular magnetic anisotropy nanowires

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