Magnetic domain walls: types, processes and applications

Venkat, G; Allwood, D A; Hayward, T J

doi:10.1088/1361-6463/ad0568

Cited by 10 publications

(7 citation statements)

References 252 publications

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“…The corresponding DW writing, transport, and reading schemes are indicated, as well as the DW track widths. Based on the review by Venkat et al [33]. "Oersted" indicates that the DWs are nucleated using the magnetic Oersted field produced by the electrical current in a wire.…”

Section: Advancements Of Dw Devices For Boolean Logic and Unconventio...mentioning

confidence: 99%

“…The ability to drive DW motion by a field or by an electrical current in nanowires opens a novel paradigm for transporting spin information in logic circuits. The interactions of DWs at nanowire junctions can then be exploited to build logic gates [ 24 , 33 ]. Therefore, the controlled DW evolution in a circuit allows Boolean logic where information is encoded in the magnetization direction or the chirality of DWs.…”

Section: Emerging Logic Functionalities In Dw Devicesmentioning

confidence: 99%

“…The nonvolatility also allows combining logic and memory for in-memory computing architectures [ 32 ]. Furthermore, the stochastic behavior of DWs can be exploited for unconventional computation paradigms, including neuromorphic computing, stochastic computing, and reservoir computing [ 33 ]. Nevertheless, the demonstration of DW logic circuits with electrical writing and reading at the nanoscale is still needed to unveil their real application potential.…”

Section: Introductionmentioning

confidence: 99%

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Progress in Spin Logic Devices Based on Domain-Wall Motion

Vermeulen,

Sorée,

Couet

et al. 2024

Micromachines

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Spintronics, utilizing both the charge and spin of electrons, benefits from the nonvolatility, low switching energy, and collective behavior of magnetization. These properties allow the development of magnetoresistive random access memories, with magnetic tunnel junctions (MTJs) playing a central role. Various spin logic concepts are also extensively explored. Among these, spin logic devices based on the motion of magnetic domain walls (DWs) enable the implementation of compact and energy-efficient logic circuits. In these devices, DW motion within a magnetic track enables spin information processing, while MTJs at the input and output serve as electrical writing and reading elements. DW logic holds promise for simplifying logic circuit complexity by performing multiple functions within a single device. Nevertheless, the demonstration of DW logic circuits with electrical writing and reading at the nanoscale is still needed to unveil their practical application potential. In this review, we discuss material advancements for high-speed DW motion, progress in DW logic devices, groundbreaking demonstrations of current-driven DW logic, and its potential for practical applications. Additionally, we discuss alternative approaches for current-free information propagation, along with challenges and prospects for the development of DW logic.

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Section: Advancements Of Dw Devices For Boolean Logic and Unconventio...mentioning

confidence: 99%

Section: Emerging Logic Functionalities In Dw Devicesmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Progress in Spin Logic Devices Based on Domain-Wall Motion

Vermeulen,

Sorée,

Couet

et al. 2024

Micromachines

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“…In recent years, many experiments have observed the phenomenon of current driven magnetic domain wall motion in magnetic nanostructures [1][2][3][4][5][6][7], and there have also been many theoretical works to reveal the physical mechanisms of the related experimental phenomena [8][9][10][11][12][13][14][15][16][17][18][19][20][21]. However, most of the research is limited to the movement properties of current driven the single magnetic domain walls in long straight magnetic nanowires.…”

Section: Introductionmentioning

confidence: 99%

Current driven properties and the associated magnetic domain walls manipulation in U-shaped magnetic nanowires

Gong,

Wang,

Gao

et al. 2024

New J. Phys.

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Based on the extended Landau-Lifshitz-Gilbert (LLG) method, the properties of current driven domain wall movement in U-shaped magnetic nanowires and the effect of spin wave assistance on their properties have been investigated. The results show that changes of the curvature radius of magnetic nanowire can cause the additional pinning action and the pinning action will weaken the speed of current driven domain wall movement. For U-shaped magnetic nanowires, the changes of curvature radius can be represented by the radius R at the bend. The results show that the decline of its speed non-monotonically increases with the decrease of the bending radius of magnetic nanowires. On the other hand, the assistance of applying spin waves not only enhances the movement of magnetic domain walls but also weakens the pinning action. Further research has shown that applying the appropriate spin waves at the bend changing point can completely eliminate the influence induced by bend changing, in order to ensure uniform and stable movement of current driven magnetic domain walls in U-shaped magnetic nanowires, and achieve the current driven three-dimensional racetrack memory technology.

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“…Thus, without the application of external magnetic fields, the magnetic domain and domain walls are unavoidable in patterned soft-magnetic material systems. As they can have different shapes and widths, the magnetic domains are an exciting playground for fundamental research and have become in recent years the subject of intense studies [ 3 ]; these studies have mainly been focused on controlling, manipulating, and moving their internal magnetic configuration; their usage in information storage [ 4 , 5 , 6 ]; their performance in logic operations [ 7 , 8 , 9 ]; high frequency inductors [ 10 ]; and sensor applications.…”

Section: Introductionmentioning

confidence: 99%

Relationship of Magnetic Domain and Permeability for Clustered Soft Magnetic Narrow Strips with In-Plane Inclined Magnetization Easy Axis on Distributed Magnetic Field

Nakai

2024

Sensors

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A unique functionality was reported for a thin-film soft magnetic strip with a certain angle of inclined magnetic anisotropy. It can switch magnetic domain by applying a surface normal field with a certain distribution on the element. The domain switches between a single domain and a multi-domain. Our previous study shows that this phenomenon appears even in the case of the adjacent configuration of multiple narrow strips. It was also reported that the magnetic permeability for the alternating current (AC) magnetic field changes drastically in the frequency range from 10 kHz to 10 MHz as a function of the strength of the distributed magnetic field. In this paper, the correspondence of AC permeability and the magnetic domain as a function of the intensity of the distributed field is investigated. It was confirmed that the extension of the area of the Landau–Lifshitz-like multi-domain on the clustered narrow strips was observed as a function of the intensity of the distributed magnetic field, and this domain extension was matched with the permeability variation. The result leads to the application of this phenomenon to a tunable inductor, electromagnetic shielding, or a sensor for detecting and memorizing the existence of a distributed magnetic field generated by a magnetic nanoparticle in the vicinity of the sensor.

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Magnetic domain walls: types, processes and applications

Cited by 10 publications

References 252 publications

Progress in Spin Logic Devices Based on Domain-Wall Motion

Progress in Spin Logic Devices Based on Domain-Wall Motion

Current driven properties and the associated magnetic domain walls manipulation in U-shaped magnetic nanowires

Relationship of Magnetic Domain and Permeability for Clustered Soft Magnetic Narrow Strips with In-Plane Inclined Magnetization Easy Axis on Distributed Magnetic Field

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