Magnetic-ferroelectric synergic control of multilevel conducting states in van der Waals multiferroic tunnel junctions towards in-memory computing

Cui, Zhou; Sa, Baisheng; Xue, Kan-Hao; Zhang, Yinggan; Xiong, Rui; Wen, Cuilian; Miao, Xiangshui; Sun, Zhimei

doi:10.1039/d3nr04712a

Nanoscale

2024

DOI: 10.1039/d3nr04712a

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Magnetic-ferroelectric synergic control of multilevel conducting states in van der Waals multiferroic tunnel junctions towards in-memory computing

Zhou Cui,

Baisheng Sa,

Kan-Hao Xue

et al.

Abstract: Multilevel nonvolatile storage and in-memory computing can be achieved simultaneously in one unit of the TiTe2/Mn2Se3/bilayer-In2S3/Mn2Se3/TiTe2 multiferroic tunnel junction.

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Cited by 6 publications

References 70 publications

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Two-dimensional XYN3 (X=V, Nb, Ta; Y=Si, Ge): Promising optoelectronic materials in photovoltaic photodetectors

Cui,

Huang,

et al. 2024

Surfaces and Interfaces

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Two-dimensional XYN3 (X=V, Nb, Ta; Y=Si, Ge): Promising optoelectronic materials in photovoltaic photodetectors

Cui,

Huang,

et al. 2024

Surfaces and Interfaces

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Designing van der Waals magnetic tunnel junctions with high tunnel magnetoresistance via Brillouin zone filtering

Li,

Guo,

Robertson

et al. 2024

Nanoscale

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Theoretical study of metal contacts to the monolayer ferroelectric material CuInP2S6 and its device applications

Qi,

Han,

Yang

et al. 2024

Applied Physics Letters

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Two-dimensional (2D) ferroelectric materials exhibit significant potential for applications in nonvolatile memory and device miniaturization. In the device design stage, it is essential to consider the compatibility between 2D ferroelectric materials and three-dimensional (3D) metal. However, the interface between them introduces complex interactions that could impact the device's performance. In this work, based on the first-principles method, we simulate several 3D metal–2D ferroelectric material contact systems by utilizing different 3D metals in contact with the 2D ferroelectric monolayer CuInP2S6 (CIPS). By calculating the electronic structures of the systems, we find that the Cd(001)–CIPS configuration is the most stable structure, followed by the Ag(111)–CIPS and Au(111)–CIPS systems. Both the Cd(001)–CIPS and Ag(111)–CIPS systems undergo a transition from Schottky to Ohmic contact. Finally, we theoretically design a ferroelectric tunnel junction (FTJ) based on the Cd(001)–CIPS contact system, achieving a tunneling electroresistance ratio of 2.394×105% and a remarkably low resistance–area product of 0.78 Ω·μm2, which makes the proposed FTJ superior to the conventional 3D FTJ. This work provides some insights for the design of nonvolatile storage devices.

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Magnetic-ferroelectric synergic control of multilevel conducting states in van der Waals multiferroic tunnel junctions towards in-memory computing

Abstract: Multilevel nonvolatile storage and in-memory computing can be achieved simultaneously in one unit of the TiTe2/Mn2Se3/bilayer-In2S3/Mn2Se3/TiTe2 multiferroic tunnel junction.

Cited by 6 publications

References 70 publications

Two-dimensional XYN3 (X=V, Nb, Ta; Y=Si, Ge): Promising optoelectronic materials in photovoltaic photodetectors

Two-dimensional XYN3 (X=V, Nb, Ta; Y=Si, Ge): Promising optoelectronic materials in photovoltaic photodetectors

Designing van der Waals magnetic tunnel junctions with high tunnel magnetoresistance via Brillouin zone filtering

Theoretical study of metal contacts to the monolayer ferroelectric material CuInP2S6 and its device applications

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