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Related contentNanotechnology as a way to overcome the rapid J c fall with HTS film thickness V L Svetchnikov, V S Flis, A A Kalenyuk et al. The increase in the normal field is attributed to the pinning of nanoparticles, while the decrease in the parallel field is considered to be caused by limitation of extension of stacking faults by distributed BZO nanoparticles. In addition, the n-value ( ) decreases by introduction of BZO nanoparticles for = 90°, while it is unchanged for = 0°. These results are well described by a theoretical model of flux creep and flow.n J E
IntroductionTrifluroacetates (TFA) metal organic deposition (MOD) is expected to be a low cost process for the fabrication of REBa 2 Cu 3 O y (RE = rare earth: REBCO) coated conductors, and the critical current density J c under a magnetic field is desired to be improved for the REBCO coated conductors made by this method. The critical current density is required to be high for all directions of the magnetic field for applications for electric power devices such as transformer and superconducting magnetic energy storage (SMES). It is known that J c of REBCO thin films in the magnetic field is greatly improved by introduction of a non-superconducting phase at the nanometer scale [1][2][3][4][5]. Recently, it was reported that a very high flux pinning force in a magnetic field has been obtained at 77 K for the MOD processed Y 1-x Gd x Ba 2 Cu 3 O y (YGdBCO) coated conductor with BaZrO 3 (BZO) fabricated from a starting solution containing Zr-naphthenate salt [6]. In addition, the field angle anisotropy could also be reduced. However, the detailed mechanism of flux pinning of BZO nanoparticles which derives such high critical current characteristic in YGdBCO coated conductors was not reported. In this study, the critical current density in YGdBCO+BZO and YGdBCO coated conductors with the superconducting layer of 0.5 m thickness is measured in various directions of the magnetic field and the result is theoretically analyzed to clarify the flux pinning mechanism.