Magnetic-field dependence of the impurity states in a dome-shaped quantum dot

Niculescu, E.C.; Stan, Cristina; Cristea, M.; Truşcă, C. R.

doi:10.1016/j.chemphys.2017.06.004

Cited by 23 publications

(10 citation statements)

References 41 publications

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“…Figure 8 shows the probability density of electrons and holes calculated with zero magnetic field. Results are similar to those reported in previous works [1,5], where impurities are not included, confirming their almost null effect.…”

Section: Impurity In Qdsupporting

confidence: 91%

“…However, this behavior changes at magnetic fields around of 10T for lower energy states, presenting an anti-crossing [30]. This is probably due to the change in the effective mass as modified by the magnetic field [1]. It can seen that the energy of the holes changed in a way very difference that the electrons, due the high interaction between the holes indicated by different colors to clarity.…”

Section: Inas/gaas Qd's Under Magnetic Fieldmentioning

confidence: 93%

“…Nowadays, many studies, both theoretical and experimental, are carried out in order to control the spin of the electrons [1,2] and thus allowing to use it in the manufacture of a new type of very powerful computers. This task is not easy, however.…”

Section: Introductionmentioning

confidence: 99%

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Effect of magnetic field and impurities in InAs/GaAs and GaN/AlN self-assembled quantum dots

Garcia

Meza-Montes

2019

Rev. Mex. Fís.

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A theoeritical study on the effect of a magnetic field or impurities on the carries states of self-assembled quantum dots is presented. The magnetic field is applied along the growth direction of the dots, and for comparison two systems are considered, InAs embeded in GaAs, and GaN in AlN. The electronic states and energy are calculated in the framework of the k.p theory in 8 bands including the strain and piezoelectric effects. Zeeman splitting and anticrossings are observed in InAs/GaAs, while the field introduces small changes in the nitrides. It is also included a study about hidrogen-like impurities, which may be negative or positive. It is noted that depending on the type of impurity, the confinement energy of carriers is changed, and the distribution of the probability density of the carriers is affected too.

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Section: Impurity In Qdsupporting

confidence: 91%

Section: Inas/gaas Qd's Under Magnetic Fieldmentioning

confidence: 93%

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Effect of magnetic field and impurities in InAs/GaAs and GaN/AlN self-assembled quantum dots

Garcia

Meza-Montes

2019

Rev. Mex. Fís.

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“…In these studies the applied magnetic field changes the arrangements of the energy levels in space, which, in turn, affect the performance of optoelectronic devices [40]. Apart from this, works on magnetic properties of LDSS deem importance in view of the development of spintronics, elucidation of electronic structure of LDSS [35], understanding the semiconductor-metal transitions in LDSS [41] and so on so forth.…”

Section: Introductionmentioning

confidence: 99%

Magnetic susceptibility of doped quantum dots: interplay between binding energy and noise

2020

Biointerface Res Appl Chem

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Current work focuses on realizing how the interaction between binding energy(BE) and noise influences the magnetic susceptibility(χ) of doped GaAs quantum dot (QD). The system is exposed to Gaussian white noise and the dopant is also characterized by a Gaussian function. The work also highlights the role of the pathway via which noise may operate in the system. We have found that it is the multiplicative noise that alters the χ profile significantly from that of a noise-free atmosphere. However, additive noise does not change the χ profile from that under noise-free state to any meaningful size. Often multiplicative noise induces paramagnetism in the system which otherwise shows diamagnetism. And the noise-BE interplay prominently determines the extent of diamagnetism displayed by the system.

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“…One of the key factors in the study of 3D-QDs is the shape of the structure. In the last three decades, spherical, pyramidal, and core/shell QDs, among others, have been studied intensively 2,6,[8][9][10][11][12] . For the confinement potentials, abrupt and parabolic models have been used to describe the spherical QDs, which with relative simplicity make it possible to obtain the electronic and hole energy spectrum 2,6 .…”

mentioning

confidence: 99%

Donor impurity related optical and electronic properties of cylindrical GaAs-AlxGa1−x As quantum dots under tilted electric and magnetic fields

Heyn

Duque

2020

Sci Rep

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this article makes a theoretical study of the optical and electronic properties in cylindrical GaAs-Al x Ga 1−x As quantum dots in the presence of an arbitrarily located donor impurity and considering the simultaneous effects of tilted electric and magnetic fields. The studies are developed in the effective mass and parabolic band approximations. the solution of the Schrödinger equation is done through the finite element method considering tetrahedral meshes that can be adapted to regions where there are abrupt variations of the materials that make up the structure. Among the many results, reported for the first time in this article, we can mention: (i) the electronic spectrum, without and with shallow donor impurity, considering separate and combined effects of tilted electric and magnetic fields, (ii) the ground state binding energy as a function of the external electric and magnetic fields, their orientations concerning the axial axis of the quantum dot, and the impurity position, (iii) the squared reduced dipole matrix elements for impurity related inter-level optical transitions as a function of the tilted electric and magnetic fields and impurity position, and (iv) the optical absorption coefficient between the ground state and at least the first fifteen lowest excited states under tilted electric and magnetic fields and considering several impurity positions. From this study it can be concluded that the presence of tilted electric and magnetic fields and on-center or off-center shallow donor impurities, ostensibly enrich the optical and electronic properties of the system. It is observed that due to the rupture of the azimuthal symmetry of the cylindrical quantum dot, important modifications of the selection rules for inter-level transitions between states appear.

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Magnetic-field dependence of the impurity states in a dome-shaped quantum dot

Cited by 23 publications

References 41 publications

Effect of magnetic field and impurities in InAs/GaAs and GaN/AlN self-assembled quantum dots

Effect of magnetic field and impurities in InAs/GaAs and GaN/AlN self-assembled quantum dots

Magnetic susceptibility of doped quantum dots: interplay between binding energy and noise

Donor impurity related optical and electronic properties of cylindrical GaAs-AlxGa1−x As quantum dots under tilted electric and magnetic fields

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