Abstract:At temperatures below about 30 mK in Si:B the phase relaxation time T 2 of the two-level systems associated with the acceptor ground state can be determined from the decay of the two-pulse echo. It has been shown to depend on the concentration of interacting resonant states if the latter is high enough. This concentration is not only given by the boron concentration but depends also on internal and external stress, and the magnetic field. Under conditions of low concentration T 2 becomes long and we observe a … Show more
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