Magnetic-field induced resistivity minimum with in-plane linear magnetoresistance of the Fermi liquid in SrTiO<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:msub><mml:mrow /><mml:mrow><mml:mn>3</mml:mn><mml:mo>−</mml:mo><mml:mi>x</mml:mi></mml:mrow></mml:msub></mml:math>single crystals

Liu, Z. Q.; Lü, Weiming; Wang, X.; Huang, Zhen; Annadi, Anil; Zeng, Shengwei; Venkatesan, T.; Ariando, Ariando

doi:10.1103/physrevb.85.155114

Cited by 26 publications

(27 citation statements)

References 39 publications

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“…Below 60 K a positive MR of 5% is observed, at decisively lower temperatures (down to 7 K) values as large as 147% are reached. The MR(B) dependence is approximately linear, which was already reported in the literature [28,29] for highly reduced SrTiO 3 . Regarding the reference MR measurements on the bare reduced SrTiO 3 single crystal, both the light-induced MIT at 80 K and the positive MR below 70 K in the highly reduced sample C clearly reflect the occurrence of parallel charge transport within the SrTiO 3 substrate.…”

Section: 22supporting

confidence: 78%

Conductivity and magnetoresistance of La_0.7Ce_0.3MnO_3−δthin films under photoexcitation

Thiessen

Beyreuther

Werner

et al. 2014

J. Phys.: Condens. Matter

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Abstract. La 0.7 Ce 0.3 MnO 3 thin films of different thicknesses, degrees of CeO 2 -phase segregation and oxygen deficiency, grown on SrTiO 3 single crystal substrates, were comparatively investigated with respect to both their spectral and temperaturedependent photoconductivity (PC) and their magnetoresistance (MR) behaviour under photoexcitation. While as-grown films were insensitive to optical excitation, oxygen reduction appeared to be an effective way to decrease the film resistance, but the film thickness was found to play a minor role. However, from the evaluation of the spectral behaviour of the PC and the comparison of the MR of the LCeMO/substrate-samples with a bare substrate under illumination we find that the photoconductivity data reflects not only contributions from (i) photogenerated charge carriers in the film and (ii) carriers injected from the photoconductive substrate (as concluded from earlier works), but also (iii) a decisive parallel photoconduction in the SrTiO 3 substrate. Furthermore -also by analyzing the MR characteristics -the unexpected occurence of a strong electroresistive effect in the sample with the highest degree of CeO 2 segregation and oxygen deficiency could be attributed to the electroresistance of the SrTiO 3 substrate as well. The results suggest a critical reconsideration and possibly a reinterpretation of several previous photoconductivity and electroresistance investigations of manganite thin films on SrTiO 3 .

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Section: 22supporting

confidence: 78%

Conductivity and magnetoresistance of La_0.7Ce_0.3MnO_3−δthin films under photoexcitation

Thiessen

Beyreuther

Werner

et al. 2014

J. Phys.: Condens. Matter

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“…is similar to that of reduced STO single crystals, [15] where the mobility falls Cationic vacancies could lead to the bandgap enhancement because the O 2p band is no longer full and meanwhile the crystal field splitting of Ti atoms in the oxygen octahedron is reduced in the present of cationic vacancies (see Figure S3 of the Supporting Information). In this case, an estimated 6% cationic vacancies is expected to generate a bandgap increase of 0.35 eV in crystalline STO films.…”

mentioning

confidence: 51%

“…For example, oxygen vacancies in STO have been a longstanding issue of debate in understanding the emergence of novel electronic and magnetic phases in the 2DEG. Additionally, a fundamental issue related to STO remaining up to now is that although STO single crystals are easy to make metallic with oxygen vacancies, [15,16] it is rather difficult to make an insulating STO thin film completely metallic via oxygen vacancies. Instead, oxygen-deficient STO films are typically semiconducting at low temperatures.…”

mentioning

confidence: 99%

Bandgap Control of the Oxygen‐Vacancy‐Induced Two‐Dimensional Electron Gas in SrTiO₃

Liu

Zeng

Deng

et al. 2014

Adv Materials Inter

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STO is central to modern oxide electronics since it serves as the main workhorse for complex functional oxide heterostructure fabrications. After the two-dimensional electron gas (2DEG) at the interface between STO and LAO had been unveiled, [7] a large number of exotic properties of the 2DEG were revealed such as a critical thickness for the appearance of conductivity, [8] Kondo effect, [9] interface superconductivity, [10] an electrically tunable ground state, [11,12] electronic phase separation [5] and recently discovered high-temperature superconductor-like gap behavior. [13] In addition, the practicability of monolithically integrated oxide electronics based on the LAO/STO interface system has been demonstrated. [14] As the research on the LAO/STO interface system is going on, the properties of STO itself have become a center of attention. For example, oxygen vacancies in STO have been a longstanding issue of debate in understanding the emergence of novel electronic and magnetic phases in the 2DEG. Additionally, a fundamental issue related to STO remaining up to now is that although STO single crystals are easy to make metallic with oxygen vacancies, [15,16] it is rather difficult to make an insulating STO thin film completely metallic via oxygen vacancies. Instead, oxygen-deficient STO films are typically semiconducting at low temperatures. [17][18][19][20] Besides, the 2DEG at the LAO/STO interface fabricated on STO films [21][22][23][24] is more localized at low temperatures than that fabricated on STO single crystals; [7] it was found that the insertion of a STO film layer degrades the LAO/STO interface significantly; [25,26] the fully metallic state of the LAO/STO interface based on STO films is achieved when STO films are deposited at a very high temperature of 1100 °C. [27] These perhaps indicate the presence of point defects/disorder in the STO films deposited at the typical temperature range of 600-800 °C.A 2DEG in STO-based heterostructures can be created via oxygen vacancies (2DEG-V) when the overlayer contains elements such as Al which have a strong affinity for oxygen. [28][29][30] Hence the 2DEG-V can be easy to realize by depositing an amorphous, nonpolar LAO (aLAO) film onto STO at room temperature. In this work, our focus is on the 2DEG-V at the interface between amorphous LAO films and STO films, and its relation to the bandgap of STO films, which was found to significantly increase due to the defective nature of STO thin films.In this work, we fabricated 2DEG-V heterostructures by depositing aLAO films on STO films that were pre-deposited on LAO single-crystal substrates. STO films of 150 nm thickness were deposited from a single-crystal STO target on (100)-oriented LAO singlecrystal substrates, using pulsed laser deposition (KrF laser λ = 248 nm) in 10 -2 Torr oxygen partial pressure at various temperatures ranging from 30 to 750 °C. After deposition, the STO films were cooled to room temperature in the deposition oxygen pressure. Amorphous 25-nm-thick LAO films were subsequently deposit...

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“…But we do not see such a behavior in our thin films. In experiments on strongly correlated oxides, linear positive MR has also been seen in SrTiO 3 crystals and was attributed to the presence of point defects 60 . Non-saturating linear MR has also been observed in high mobility semiconductors due to the fluctuations in the mobility of the carriers 61,62 and semiconductors in strongly localized regime 63 .…”

Section: Resultsmentioning

confidence: 99%

Sign reversal of magnetoresistance in a perovskite nickelate by electron doping

et al. 2016

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We present low temperature resistivity and magnetotransport measurements conducted on pristine and electron doped SmNiO3 (SNO). The low temperature transport in both pristine and electrondoped SNO shows a Mott variable range hopping with a substantial decrease in localization length of carriers by one order in the case of doped samples. Un-doped SNO films show a negative magnetoresistance (MR) at all temperatures characterized by spin fluctuations with the evolution of a positive cusp at low temperatures. In striking contrast, upon electron doping of the films via hydrogenation, we observe a crossover to a linear non-saturating positive MR∼ 0.2 % at 50 K . The results signify the role of localization phenomena in tuning the magnetotransport response in doped nickelates. Ionic doping is therefore a promising approach to tune magnetotransport in correlated perovskites.

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Magnetic-field induced resistivity minimum with in-plane linear magnetoresistance of the Fermi liquid in SrTiO3−xsingle crystals

Cited by 26 publications

References 39 publications

Conductivity and magnetoresistance of La_0.7Ce_0.3MnO_3−δthin films under photoexcitation

Conductivity and magnetoresistance of La_0.7Ce_0.3MnO_3−δthin films under photoexcitation

Bandgap Control of the Oxygen‐Vacancy‐Induced Two‐Dimensional Electron Gas in SrTiO₃

Sign reversal of magnetoresistance in a perovskite nickelate by electron doping

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Magnetic-field induced resistivity minimum with in-plane linear magnetoresistance of the Fermi liquid in SrTiO3−xsingle crystals

Cited by 26 publications

References 39 publications

Conductivity and magnetoresistance of La0.7Ce0.3MnO3−δthin films under photoexcitation

Conductivity and magnetoresistance of La0.7Ce0.3MnO3−δthin films under photoexcitation

Bandgap Control of the Oxygen‐Vacancy‐Induced Two‐Dimensional Electron Gas in SrTiO3

Sign reversal of magnetoresistance in a perovskite nickelate by electron doping

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Conductivity and magnetoresistance of La_0.7Ce_0.3MnO_3−δthin films under photoexcitation

Conductivity and magnetoresistance of La_0.7Ce_0.3MnO_3−δthin films under photoexcitation

Bandgap Control of the Oxygen‐Vacancy‐Induced Two‐Dimensional Electron Gas in SrTiO₃